12.07.2015 Views

Ion Implantation and Synthesis of Materials - Studium

Ion Implantation and Synthesis of Materials - Studium

Ion Implantation and Synthesis of Materials - Studium

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

12.4 Sputtering <strong>of</strong> Alloys <strong>and</strong> Compounds 165the higher the sputtering yield. Therefore the sputtering yield is proportional to thenuclear stopping power <strong>of</strong> the incident ion in the near surface region.The main features remain the same for composite materials such as binaryalloys. There are additional complications, however, because there are two kinds<strong>of</strong> atoms in the material. The two species may not be sputtered at an equal ratebecause <strong>of</strong> differences in energy sharing (in the collision cascade), ejectionprobabilities, or binding energies. Indeed, preferential sputtering <strong>of</strong> one speciesover the other has been observed in many alloys <strong>and</strong> compounds.Since ion implantation is also a bombardment <strong>of</strong> energetic ions, there is alwayssome sputtering, especially when heavy ions <strong>and</strong> high doses are used. Sputteringmakes the sample surface recede; therefore it affects the implantation pr<strong>of</strong>ile <strong>and</strong>also removes atoms that have been implanted. This eventually leads to a steadystatecondition in which there is no further increase in the amount <strong>of</strong> implantedspecies retained in the material.12.4.1 Preferential SputteringIn a description <strong>of</strong> sputtering from a multicomponent system, the influence <strong>of</strong>preferential sputtering <strong>and</strong> surface segregation must be included. For ahomogeneous sample with atomic components A <strong>and</strong> B, <strong>and</strong> in the absence <strong>of</strong>surface segregation, the surface concentration, N s , is equal to that in the bulk, N b .Therefore, at the start <strong>of</strong> sputterings s b bA B=A BN / N N / N .(12.11)The partial yield <strong>of</strong> atomic species A <strong>and</strong> B is defined byNumber <strong>of</strong> Ejected Atoms A,BY A,B = (12.12)Incident ParticleThe partial sputtering yield, Y A , <strong>of</strong> species A is proportional to the surfacessconcentration, NA, <strong>and</strong> similarly Y B is proportional to NB. The ratio <strong>of</strong> partialyields is given byYYAB=sAsBNrN(12.13)where the sputtering factor, r, takes into account differences in surface bindingenergies, sputter escape depths, <strong>and</strong> energy transfers within the cascade. Measuredvalues <strong>of</strong> r generally are in the range between 0.5 <strong>and</strong> 2.s sIn the case when r is unity, YA/ YB = NA/NB. In the case when r ≠ 1, thessurface concentrations <strong>and</strong> yields change from their initial values, N A (0) <strong>and</strong>

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!