Ion Implantation and Synthesis of Materials - Studium

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258 Indexclosest approachdistance of 34CMOS 112, 193, 199, 213cohesive energy 162, 189ion beam mixing 189collector 109collisionbinary elastic 23diameter 34elastic 25, 51electronic 50head-on 30inelastic 25kinematics 25nuclear 50probability 44replacement 80small-angle 94soft 24two-body 23, 79violent 24collision cascade 78high density 176ion beam mixing 184random-walk 186conservationangular momentum 32energy 24momentum 25coordinatescenter-of-mass 27laboratory 25Coulombexplosion 208force 6–7, 11interatomic potential 11–13, 15unscreened potential 101critical angle channeling 97cross section 37angular-differential scattering 40differential 40, 42electronic 58energy-transfer 42, 46nuclear 52Rutherford scattering 101stopping 51total 49crystallizationion beam induced 137Damage 77depth 90efficiency 82energy 81radiation 77depth distribution 93, 150displacements per atom 85Kinchin-Pease 80primary knock-on 77spatial distribution 90SRIM 89strain 154stress 154DC-tandem accelerators 220deceleration mode 208, 224dechanneling 98, 101cross section 101defect factor 101fraction 104probability 101deep level centers 115defectcharge state 134density 101, 127dislocation 114Frenkel 78, 114hydrogen platelet 153interstitial 114interstitialcy 114line 114, 116mobility 127planar 114, 117point 114recombination 127Si-H, complexes 147substitutional 115vacancy-interstitial 77, 114volume 114densityareal 6atomic 5density of states 107depletion-layer width 204depletion region 107, 193detectorsolid angle 38deuteron 8device scaling 193diamond cubic lattice 5
Index 259differential cross-section 40, 42diffusionactivation energy 119boron 123coefficient 118, 119dopants 119drive-in 119, 202Fick’s law 118hydrogen in siliconinterstitial 122interstitialcy 122irradiation enhanced 124interdiffusion coefficient 181kick-out 122mechanisms 121radiation enhanced 126random-walk 186substitutional 122transient enhanced 122vacancy formation energy 121direct scattering 104dislocation defects 116disorderlattice 3Si 127displacementenergy 77per atom 85spike 87displacement energy 78distanceof closest approach 34screening 34distribution of range 2, 65Gaussian 66Polyatomic targets 70standard deviation 65, 70straggling 2, 65dose 1dose rate 1dose uniformity 215drain implant 205drift mode 216Electron 8electron flood gun 208electron-volt 6electronic stoppingBethe formula 58Bohr 57channeling 97Fermi-Teller 58Firsov 59high energy 57Lindhard-Scharff 59low energy 58emitter 109endststiondesign 234multi-wafer 227single-wafer 229energyactivation 119central force 31cohesive 13, 162, 189conservation 25contamination 208, 224damage 81, 127deposited 127dimensionless unit 34displacement 77,excitation 57loss 49maximum transferred 30reduced 34transferred 29transferred cross-section 42vacancy formation 12enthalpy of mixing 187epitaxial growthamorphous Si 129velocity 131epitaxyhomo 129liquid-phase 129solid-phase 129exfoliation 143Face-centered-cubic 5Fermi level 107Fermi-Teller electronic stopping 58Firsov electronic stopping 58fluence 1flux 1focused replacement sequence 86forceattractive 14Coulomb 7, 11interatomic 12long-range interatomic 12
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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Page 218 and 219: 208 14 Application of Ion Implantat
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267: IndexAlpha particle 8amorphization
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
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