Ion Implantation and Synthesis of Materials - Studium

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120 9 Doping, Diffusion and Defects in Ion-Implanted Si10 21AsPAtoms/cm 3B10 20SbAl10 19900 1000 1100 1200 1300Temperature (ºC)10 -10T (ºC)1400 1300 1200 1100 1000 95010 -11BAlOD(cm 2 /s)10 -12AsP10 -13Si10 -1410 -15 0.60 0.64 0.68 0.72 0.76 0.80 0.841000/T(K)Fig. 9.10. Solid solubility of atoms in Si (top); diffusion coefficient of dopant atoms in Si(bottom) (after Beadle et al. 1985)
9.4 Diffusion Mechanisms 121Fig. 9.11. Diffusion mechanismsa neighboring vacant site, Fig. 9.11b. It is also possible for a substitutionalimpurity atom to push a neighboring host atom into an adjacent interstitial site andmove into the vacant substitutional site thus created; this process is called theinterstitialcy mechanism.9.4.1 Interstitial MechanismThe interstitial sites of a diamond or zinc blend lattice are usually vacant. Theprobability of an interstitial atom finding an available site to jump into is veryhigh. As it jumps from one site to another, it faces a constriction due to the hostatoms (see Fig. 9.11a); the jumping atom needs a little push to squeeze by. Thissituation is described as having an activation or energy barrier. In this case thebarrier is also periodic in the lattice.9.4.2 Substitutional or Vacancy MechanismThe jumping of a substitutional atom to a neighboring substitutional site requires avacancy to be created in the adjacent site, Fig. 9.11b. The probability of such anevent is exp(− E f /kT ), where E f is the formation energy of a vacancy in the lattice.The movement causes bonds to break and new bonds to be formed after the jump.The energy barrier for this jumping process is E m (activation energy formigration). The value of E m + E f is between 3 and 4 eV (Fair 1981).9.4.3 Interstitial–Substitutional MechanismMany impurities have both an interstitial solubility, N i , and a substitutionalsolubility, N s . These interstitial impurity atoms and substitutional impurity atomscan diffuse independently or interdependently. Usually, N s is larger than N i , butsubstitutional diffusion is much slower than interstitial diffusion. In Si, these twocomponents of diffusion appear to move interdependently. They are related by a
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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Page 80 and 81: 70 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109: 98 8 ChannelingThe channeling effec
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Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
Page 138 and 139: 128 10 Crystallization and Regrowth
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Page 170 and 171: 160 12 Surface Erosion During Impla
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170 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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