PCT/2002/18 - World Intellectual Property Organization

18/2002
8692 PCT Gazette - Section I - Gazette du PCT 2 May/mai 2002
Tokyo 144-8510 (JP). SAKAMOTO,
Hideyuki [JP/JP]; c/o Ebara Corporation,
11-1, Haneda Asahi-cho, Ohta-ku, Tokyo
144-8510 (JP). OKABE, Michio [JP/JP]; c/o
Daido Tokushuko Kabushiki Kaisha, 2-30,
Daido-cho, Minami-ku, Nagoya-shi, Aichi
457-8545 (JP). SAWADA, Yoshiyuki [JP/JP];
c/o Daido Tokushuko Kabushiki Kaisha, 10,
Ryugu-cho, Minato-ku, Nagoya-shi, Aichi
455-0022 (JP). UETA, Shigeki [JP/JP]; c/o
Daido Tokushuko Kabushiki Kaisha, 2-30,
Daido-cho, Minami-ku, Nagoya-shi, Aichi
457-8545 (JP).
(74) WATANABE, Isamu et al. / etc.; GOWA
Nishi-Shinjuku 4F, 5-8, Nishi-Shinjuku
7-chome, Shinjuku-ku, Tokyo 160-0023 (JP).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CO CR CU CZ DE DK
DM DZ EC EE ES FI GB GD GE GH GM
HR HU ID IL IN IS KE KG KP KR KZ LC
LK LR LS LT LU LV MA MD MG MK MN
MW MX MZ NO NZ PH PL PT RO RU SD
SE SG SI SK SL TJ TM TR TT TZ UA UG
US UZ VN YU ZA ZW.
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ
UG ZW); EA (AM AZ BY KG KZ MD RU
TJ TM); EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE TR); OA
(BF BJ CF CG CI CM GA GN GQ GW ML
MR NE SN TD TG).
(51) 7 C22C 38/12
(11) WO 02/34957
(21) PCT/JP01/05210
(13) A1
(22) 19 Jun/juin 2001 (19.06.2001)
(25) ja (26) ja
(30) 2000-326149 25 Oct/oct 2000
(25.10.2000)
JP
(43) 2 May/mai 2002 (02.05.2002)
(54) SINTERED SPROCKET
ROUE DENTEE SINTERISEE
(71) HONDA GIKEN KOGYO KABUSHIKI
KAISHA [JP/JP]; 1-1, Minami-Aoyama
2-chome, Minato-ku, Tokyo 107-0062 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) FUJIWARA, Akira [JP/JP]; c/o
Kabushiki Kaisha Honda Gijutsu Kenkyusho,
4-1, Chuo 1-chome, Wako-shi, Saitama
351-0113 (JP).
(74) SUENARI, Mikio; Hitachi 6th Building 4th
floor, 6-14, Kyobashi 2-chome, Chuo-ku,
Tokyo 104-0031 (JP).
(81) BR CA CN US.
(84) EP (DE FR GB).
(51) 7 C22C 38/38
(11) WO 02/34958
(21) PCT/IB01/02009
(13) A1
(22) 26 Oct/oct 2001 (26.10.2001)
(25) en (26) en
(30) 00 125769.2 26 Oct/oct 2000
(26.10.2000)
CN
(43) 2 May/mai 2002 (02.05.2002)
(54) IRON-MANGANESE-SILICON-BASED
SHAPE MEMORY ALLOYS CONTAIN-
ING CHROMIUM AND NITROGEN
ALLIAGES A MEMOIRE A BASE
DE SILICONE-MANGANESE-FER
CONTENANT DU CHROME ET DE
L’AZOTE
(71) EMERSON ELECTRIC (CHINA)
HOLDINGS CO. LTD. [CN/CN]; 10th
floor, Pidemco Tower, 318 Fuzhou Road,
Shanghai (CN).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) ZUYAO, Xu [CN/CN]; School of Materials
Science and Engineering, Shanghai
Jiao Tong University, 1954 Huashan Road,
Shanghai 200030 (CN). SHIPU, Chen
[CN/CN]; School of Materials Science and
Engineering, Shanghai Jiao Tong University,
1954 Huashan Road, Shanghai 200030 (CN).
JAINFENG, Wan [CN/CN]; School of Materials
Science and Engineering, Shanghai
Jiao Tong University, 1954 Huashan Road,
Shanghai 200030 (CN). ZHENGHONG,
Guo [CN/CN]; School of Materials Science
and Engineering, Shanghai Jiao Tong University,
1954 Huashan Road, Shanghai 200030
(CN). JIHUA, Zhang [CN/CN]; School of
Materials Science and Engineering, Shanghai
Jiao Tong University, 1954 Huashan Road,
Shanghai 200030 (CN). YONGHUA, Rong
[CN/CN]; School of Materials Science and
Engineering, Shanghai Jiao Tong University,
1954 Huashan Road, Shanghai 200030 (CN).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CO CR CU CZ DE DK
DM DZ EC EE ES FI GB GD GE GH GM
HR HU ID IL IN IS JP KE KG KP KR KZ
LC LK LR LS LT LU LV MA MD MG MK
MN MW MX MZ NO NZ OM PH PL PT RO
RU SD SE SG SI SK SL TJ TM TR TT TZ
UA UG US UZ VN YU ZA ZW.
Published / Publiée :(c)
Declaration / Déclaration :
(u) for / pour US only / seulement
(51) 7 C23C 16/00
(11) WO 02/34959
(21) PCT/IL01/00990
(13) A2
(22) 25 Oct/oct 2001 (25.10.2001)
(25) en (26) en
(30) 139266 25 Oct/oct 2000
(25.10.2000)
IL
(43) 2 May/mai 2002 (02.05.2002)
(54) A METHOD AND APPARATUS
FOR PRODUCING INORGANIC
FULLERENE-LIKE NANOPARTICLES
PROCEDE ET APPAREIL DE PRO-
DUCTION DE NANOPARTICULES
INORGANIQUES DE TYPE FULLE-
RENE
(71) YEDA RESEARCH AND DEVELOP-
MENT CO. LTD. [IL/IL]; at The Weizmann
Institute of Science, P.O. Box 95, 76100
Rehovot (IL).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) TENNE, Reshef [IL/IL]; 21 Hashomrin
Street, 76231 Rehovot (IL). FELD-
MAN, Yishay [IL/IL]; 30 Hapalmach
Street, 77391 Ashdod (IL). ZAK, Alla
[IL/IL]; 43B Gordon Street, 76287 Rehovot
(IL). ROSENTSVEIG, Rita [IL/IL]; 22/26
Gluskin Street, 76273 Rehovot (IL).
(74) REINHOLD COHN AND PARTNERS;
P.O. Box 4060, 61040 Tel Aviv (IL).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CO CR CU CZ DE DK
DM DZ EC EE ES FI GB GD GE GH GM
HR HU ID IL IN IS JP KE KG KP KR KZ
LC LK LR LS LT LU LV MA MD MG MK
MN MW MX MZ NO NZ PH PL PT RO RU
SD SE SG SI SK SL TJ TM TR TT TZ UA
UG US UZ VN YU ZA ZW.
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ
UG ZW); EA (AM AZ BY KG KZ MD RU
TJ TM); EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE TR); OA
(BF BJ CF CG CI CM GA GN GQ GW ML
MR NE SN TD TG).
(51) 7 C23C 16/00
(11) WO 02/34960 (13) A2
(21) PCT/US01/49681
(22) 19 Oct/oct 2001 (19.10.2001)
(25) en (26) en
(30) 09/698,522 27 Oct/oct 2000 US
(27.10.2000)
(43) 2 May/mai 2002 (02.05.2002)
(54) METHODS FOR SYNTHESIZING
HIGH-EFFICIENCY DIAMOND AND
MATERIAL AND DIAMOND MATE-
RIAL PRODUCED THEREBY
PROCEDES DE SYNTHESE D’UNE
MATIERE ET D’UN DIAMANT A
HAUTE EFFICACITE, MATIERE DE
DIAMANT AINSI PRODUITE
(71) P1 DIAMOND, INC. [US/US]; 3571
Leonard Court, Santa Clara, CA 95054 (US).
(72) PINNEO, John, M.; 124 Santa Maria Avenue,
Portola Valley, CA 94028 (US).
(74) D’ALESSANDRO, Kenneth et al. / etc.;
Sierra Patent Group, Ltd., P.O. Box 6149,
Stateline, NV 89449 (US).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CR CU CZ DE DK DM
DZ EE ES FI GB GD GE GH GM HR HU
ID IL IN IS JP KE KG KP KR KZ LC LK
LR LS LT LU LV MA MD MG MK MN MW
MX MZ NO NZ PL PT RO RU SD SE SG SI
SK SL TJ TM TR TT TZ UA UG UZ VN YU
ZA ZW.
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ
UG ZW); EA (AM AZ BY KG KZ MD RU
TJ TM); EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE TR); OA
(BF BJ CF CG CI CM GA GN GQ GW ML
MR NE SN TD TG).
(51) 7 C23C 16/06, 14/34, B05D 3/02
(11) WO 02/34961
(21) PCT/US01/32568
(13) A1
(22) 18 Oct/oct 2001 (18.10.2001)
(25) en (26) en
(30) 09/695,509 24 Oct/oct 2000
(24.10.2000)
US
(43) 2 May/mai 2002 (02.05.2002)
(54) VACUUM METALIZATION PROCESS
FOR CHROMING SUBSTRATES
PROCEDE DE METALLISATION SOUS
VIDE POUR LE CHROMAGE DE SUB-
STRATS