PCT/2002/18 - World Intellectual Property Organization

18/2002
2 May/mai 2002 PCT Gazette - Section I - Gazette du PCT 8813
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) TOBE, Satoshi [JP/JP]; c/o SHIN-ETSU
HANDOTAI CO., LTD. Isobe R & D Cente,
r 13-1, Isobe 2-chome, Annaka-shi, Gunma
379-0196 (JP). AIHARA, Ken [JP/JP]; c/o
SHIN-ETSU HANDOTAI CO., LTD. Isobe R
& D Cente, r 13-1, Isobe 2-chome, Annakashi,
Gunma 379-0196 (JP).
(74) ISHIHARA, Shoji; No.302, Wakai
Bldg., 7-8, Higashi-Ikebukuro 3-chome,
Toshima-ku, Tokyo 170-0013 (JP).
(81) KR SG US.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/336, 21/8234
(11) WO 02/35600
(21) PCT/EP01/12035
(13) A2
(22) 17 Oct/oct 2001 (17.10.2001)
(25) de (26) de
(30) 100 53 428.7 27 Oct/oct 2000
(27.10.2000)
DE
(43) 2 May/mai 2002 (02.05.2002)
(54) METHOD FOR PRODUCING A DMOS
TRANSISTOR
PROCEDE DE FABRICATION D’UN
TRANSISTOR DMOS
(71) INFINEON TECHNOLOGIES AG
[DE/DE]; St.-Martin-Strasse 53, 81669
München (DE).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MUELLER, Karlheinz [DE/DE];
Finkenweg 11, 84149 Velden (DE). WAG-
NER, Cajetan [DE/DE]; Bautzner Strasse
12, 01099 Dresden (DE). ROESCHLAU,
Klaus [DE/DE]; St.
81545 Muenchen (DE).
Magnus Strasse 24,
(74) GINZEL, Christian et al. / etc.; Zimmermann
& Partner, Postfach 330 920, 80069
München (DE).
(81) CN JP KR US.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/336
(11) WO 02/35601 (13) A1
(21) PCT/US01/29120
(22) 17 Sep/sep 2001 (17.09.2001)
(25) en (26) en
(30) 09/698,670 27 Oct/oct 2000 US
(27.10.2000)
(43) 2 May/mai 2002 (02.05.2002)
(54) LASER THERMAL PROCESS FOR
FABRICATING FIELD-EFFECT TRAN-
SISTORS
PROCEDE THERMIQUE AU LASER
PERMETTANT DE FABRIQUER DES
TRANSISTORS A EFFET DE CHAMP
(71) ULTRATECH STEPPER, INC. [US/US];
3050 Zanker Road, San Jose, CA 95134 (US).
(72) TALWAR, Somit; 724 Arastradero Road,
#102, Palo Alto, CA 94306 (US). WANG,
Yun; 1411 Chavez Way, San Jose, CA 95131
(US).
(74) JONES, Allston, L.; Peters, Verny, Jones &
Biksa, 385 Sherman Avenue, Suite 6, Palo
Alto, CA 94306 (US).
(81) JP KR.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/60
(11) WO 02/35602 (13) A1
(21) PCT/JP00/07400
(22) 23 Oct/oct 2000 (23.10.2000)
(25) ja (26) ja
(43) 2 May/mai 2002 (02.05.2002)
(54) BUMP FORMING METHOD AND
BUMP FORMING DEVICE
PROCEDE ET DISPOSITIF DE FORMA-
TION DE BOSSES
(71) MITSUBISHI DENKI KABUSHIKI
KAISHA [JP/JP]; 2-3, Marunouchi 2-chome,
Chiyoda-ku, Tokyo 100-8310 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) KASATANI, Yasushi [JP/JP]; Mitsubishi
Denki Kabushiki Kaisha, 2-3,
Marunouchi 2-chome, Chiyoda-ku, Tokyo
100-8310 (JP).
(74) FUKAMI, Hisao et al. / etc.; Sumitomo
Bank Minamimori-machi Bldg., 1-29,
Minamimori-machi 2-chome, Kita-ku, Osaka-shi,
Osaka 530-0054 (JP).
(81) DE JP KR US.
(51) 7 H01L 21/66
(11) WO 02/35603 (13) A1
(21) PCT/JP01/03770
(22) 1 May/mai 2001 (01.05.2001)
(25) ja (26) ja
(30) 2000/318064 18 Oct/oct 2000 JP
(18.10.2000)
(43) 2 May/mai 2002 (02.05.2002)
(54) WAFER PROVER DEVICE, AND
CERAMIC SUBSTRATE USED FOR
WAFER PROVER DEVICE
DISPOSITIF D’ETALONNAGE DE
TRANCHE, ET SUBSTRAT EN CERA-
MIQUE UTILISE DANS LEDIT DISPO-
SITIF D’ETALONNAGE DE TRANCHE
(71) IBIDEN CO., LTD. [JP/JP]; 1, Kandacho
2-chome, Ogaki-shi, Gifu 503-0917 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) ITO, Atsushi [JP/JP]; c/o IBIDEN CO.,
LTD., 1-1, Kitagata, Ibigawacho, Ibi-gun,
Gifu 501-0695 (JP). HIRAMATSU, Yasuji
[JP/JP]; c/o IBIDEN CO., LTD., 1-1, Kitagata,
Ibigawacho, Ibi-gun, Gifu 501-0695
(JP). ITO, Yasutaka [JP/JP]; c/o IBIDEN
CO., LTD., 1-1, Kitagata, Ibigawacho,
Ibi-gun, Gifu 501-0695 (JP).
(74) YASUTOMI, Yasuo et al. / etc.; Chuo
BLDG., 4-20, Nishinakajima 5-chome, Yodogawa-ku,
Osaka-shi, Osaka 532-0011 (JP).
(81) US.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/68, B65G 49/07, H02J 17/00,
H04B 10/00
(11) WO 02/35604 (13) A1
(21) PCT/JP01/09246
(22) 22 Oct/oct 2001 (22.10.2001)
(25) ja (26) ja
(30) 2000-327287 26 Oct/oct 2000 JP
(26.10.2000)
(43) 2 May/mai 2002 (02.05.2002)
(54) TREATED SUBSTRATE TRANSFER
SYSTEM IN SEMICONDUCTOR
TREATMENT EQUIPMENT
SYSTEME DE TRANSFERT DE SUB-
STRAT TRAITE DANS UNE INSTAL-
LATION DE TRAITEMENT DE SEMI-
CONDUCTEUR
(71) TOKYO ELECTRON LIMITED [JP/JP];
3-6, Akasaka 5-chome, Minato-ku, Tokyo
107-8481 (JP). SHINKO ELECTRIC CO.,
LTD. [JP/JP]; 2-14, Toyo 7-chome, Koto-ku,
Tokyo 135-8387 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MASUOKA, Noboru [JP/JP]; 650,
Mitsuzawa, Hosaka-cho, Nirasaki-shi, Yamanashi
407-0192 (JP).
(74) SUZUYE, Takehiko et al. / etc.; c/o
SUZUYE & SUZUYE, 7-2, Kasumigaseki
3-chome, Chiyoda-ku, Tokyo 100-0013 (JP).
(81) KR US.
(51) 7 H01L 21/768
(11) WO 02/35605
(21) PCT/EP01/10833
(13) A1
(22) 19 Sep/sep 2001 (19.09.2001)
(25) de (26) de
(30) 100 53 467.8 27 Oct/oct 2000
(27.10.2000)
DE
(43) 2 May/mai 2002 (02.05.2002)
(54) METHOD FOR FORMING CONTACTS
IN INTEGRATED CIRCUITS
PROCEDE POUR FORMER DES
CONTACTS
INTEGRES
DANS DES CIRCUITS
(71) INFINEON TECHNOLOGIES AG
[DE/DE]; St.-Martin-strasee 53, 81669
München (DE).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) LAHNOR, Peter [DE/DE]; Kieler
Strasse 33, 01109 Dresden (DE). WEGE,
Stephan [DE/DE]; Hauptstrasse 7a, 01328
Dresden (DE). ROGALLI, Michael
[DE/DE]; Querstrasse 16,
burg (DE).
84056 Rotten-
(74) BARTH, Stephan; Reinhard, Skuhra, Weise
& Partner GbR, Friedrichstrasse 31, 80801
München (DE).
(81) JP KR SG US.
Published / Publiée :(c)
Declarations / Déclarations :
(u) for / pour US only / seulement; (u) for / pour
US only / seulement; (u) for / pour US only /
seulement