PCT/2002/18 - World Intellectual Property Organization

18/2002
2 May/mai 2002 PCT Gazette - Section I - Gazette du PCT 8811
(84) EP (DE FR GB).
(51) 7 H01L 21/027, G03F 7/20, 7/38
(11) WO 02/35588 (13) A1
(21) PCT/JP01/09345
(22) 24 Oct/oct 2001 (24.10.2001)
(25) ja (26) ja
(30) 2000-325172 25 Oct/oct 2000 JP
(25.10.2000)
(43) 2 May/mai 2002 (02.05.2002)
(54) PRODUCTION METHOD OF SEMI-
CONDUCTOR DEVICE AND PRODUC-
TION SYSTEM OF SEMICONDUCTOR
DEVICE
PROCEDE DE PRODUCTION DE DIS-
POSITIF SEMICONDUCTEUR ET SYS-
TEME DE PRODUCTION DE CE DIS-
POSITIF
(71) SONY CORPORATION [JP/JP]; 7-35, Kitashinagawa
6-chome, Shinagawa-ku, Tokyo
141-0001 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) KAGOTANI, Hiroshi [JP/JP]; c/o
Sony Corporation, 7-35, Kitashinagawa
6-chome, Shinagawa-ku, Tokyo 141-0001
(JP). HIRANO, Harunobu [JP/JP]; c/o
Sony Semiconductor Kyushu Corporation
Nagasaki TEC, 1883-43, Tsukuba-cho, Isahaya-shi,
Nagasaki 854-0065 (JP). HAMA,
Mitsuo [JP/JP]; c/o Sony Semiconductor
Kyushu Corporation Nagasaki TEC,
1883-43, Tsukuba-cho, Isahaya-shi, Nagasaki
854-0065 (JP).
(74) FUJISHIMA, Youichiro; 2F, Oodai Building,
9-5, Shinjuku 1-chome, Shinjuku-ku,
Tokyo 160-0022 (JP).
(81) KR US.
(51) 7 H01L 21/18
(11) WO 02/35589
(21) PCT/US01/32131
(13) A1
(22) 12 Oct/oct 2001 (12.10.2001)
(25) en (26) en
(30) 60/242,219 20 Oct/oct 2000
(20.10.2000)
US
(30) 09/916,701 26 Jul/juil 2001
(26.07.2001)
US
(43) 2 May/mai 2002 (02.05.2002)
(54) METHOD FOR SHIFTING THE
BANDGAP ENERGY OF
TUM WELL LAYER
A QUAN-
PROCEDE PERMETTANT DE DE-
CALER L’ENERGIE D’UNE BANDE
INTERDITE DE COUCHE DE PUITS
QUANTIQUE
(71, 72) OOI, Boon-Siew [MY/US]; 4318 Valley
Avenue, Apt. A, Pleasanton, CA 94566 (US).
HO, Seng-Tiong [US/US]; 120 Picardy Lane,
Wheeling, IL 60090 (US).
(74) MAEDA, Mayumi et al. / etc.; Townsend
and Townsend and Crew LLP, Two Embarcadero
Center, Eighth Floor, San Francisco,
CA 94111-3834 (US).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CO CR CU CZ DE DK
DM DZ EC EE ES FI GB GD GE GH GM
HR HU ID IL IN IS JP KE KG KP KR KZ
LC LK LR LS LT LU LV MA MD MG MK
MN MW MX MZ NO NZ PH PL PT RO RU
SD SE SG SI SK SL TJ TM TR TT TZ UA
UG UZ VN YU ZA ZW.
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ
UG ZW); EA (AM AZ BY KG KZ MD RU
TJ TM); EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE TR); OA
(BF BJ CF CG CI CM GA GN GQ GW ML
MR NE SN TD TG).
Published / Publiée :(c)
(51) 7 H01L 21/205, G01L 19/06
(11) WO 02/35590
(21) PCT/JP01/09331
(13) A1
(22) 24 Oct/oct 2001 (24.10.2001)
(25) ja (26) ja
(30) 2000-328017 27 Oct/oct 2000
(27.10.2000)
JP
(30) 2001-19341 29 Jan/jan 2001
(29.01.2001)
JP
(30) 2001-19342 29 Jan/jan 2001
(29.01.2001)
JP
(43) 2 May/mai 2002 (02.05.2002)
(54) HEAT-TREATING DEVICE
DISPOSITIF DE TRAITEMENT THER-
MIQUE
(71) TOKYO ELECTRON LIMITED [JP/JP];
3-6, Akasaka 5-chome, Minato-ku, Tokyo
107-8481 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) SAITO, Yukimasa [JP/JP]; c/o Tokyo
Electron Tohoku Limited, Sagami Plant,
2-41, Machiya 1-chome, Shiroyama-machi,
Tsukui-gun, Kanagawa 220-0101 (JP).
(74) YOSHITAKE, Kenji et al. / etc.; Kyowa
Patent & Law Office, Room 323, Fuji Bldg.,
2-3, Marunouchi 3-chome, Chiyoda-ku,
Tokyo 100-0005 (JP).
(81) KR US.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/302, 21/68
(11) WO 02/35591
(21) PCT/EP01/11897
(13) A1
(22) 15 Oct/oct 2001 (15.10.2001)
(25) de (26) de
(30) 100 52 293.9 20 Oct/oct 2000
(20.10.2000)
DE
(43) 2 May/mai 2002 (02.05.2002)
(54) METHOD FOR APPLYING A SUB-
STRATE
PROCEDE POUR L’APPLICATION
D’UN SUBSTRAT
(71) B.L.E LABORATORY EQUIPMENT
GMBH [DE/DE]; Herrenlandstrasse 58,
78315 Radolfzell (DE).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) MUFFLER, Pirmin, Gerhard
[DE/DE]; Traubenweg 12,
gen-Ninzingen (DE).
78359 Orsin-
(74) JECK, Anton; Klingengasse 2, 71665 Vaihingen
(DE).
(81) AE AG AL AM AT AU AZ BA BB BG BR
BY BZ CA CH CN CO CR CU CZ DE DK
DM DZ EC EE ES FI GB GD GE GH GM
HR HU ID IL IN IS JP KE KG KP KR KZ
LC LK LR LS LT LU LV MA MD MG MK
MN MW MX MZ NO NZ PL PT RO RU SD
SE SG SI SK SL TJ TM TR TT TZ UA UG
US UZ VN YU ZA ZW.
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ
UG ZW); EA (AM AZ BY KG KZ MD RU
TJ TM); EP (AT BE CH CY DE DK ES FI
FR GB GR IE IT LU MC NL PT SE TR); OA
(BF BJ CF CG CI CM GA GN GQ GW ML
MR NE SN TD TG).
Published / Publiée :(c)
(51) 7 H01L 21/304, B24B 37/04, 37/00
(11) WO 02/35592
(21) PCT/JP01/08801
(13) A1
(22) 5 Oct/oct 2001 (05.10.2001)
(25) ja (26) ja
(30) 2000-323474 24 Oct/oct 2000
(24.10.2000)
JP
(43) 2 May/mai 2002 (02.05.2002)
(54) POLISHING DEVICE
DISPOSITIF DE POLISSAGE
(71) NIKON CORPORATION [JP/JP]; 2-3,
Marunouchi 3-Chome, Chiyoda-ku, Tokyo
100-8331 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) SUGAYA, Isao [JP/JP]; c/o, NIKON
CORPORATION, 2-3, Marunouchi
3-Chome,
(JP).
Chiyoda-ku, Tokyo 100-8331
(74) HOSOE, Toshiaki; Corpo Fuji 605, 3-6,
Nishikanagawa 1-Chome, Kanagawa-ku,
Yokohama-Shi, Kanagawa 221-0822 (JP).
(81) CN KR US.
(84) EP (AT BE CH CY DE DK ES FI FR GB GR
IE IT LU MC NL PT SE TR).
(51) 7 H01L 21/304, B24B 37/04
(11) WO 02/35593
(21) PCT/JP01/09240
(13) A1
(22) 22 Oct/oct 2001 (22.10.2001)
(25) ja (26) ja
(30) 2000-326470 26 Oct/oct 2000
(26.10.2000)
JP
(43) 2 May/mai 2002 (02.05.2002)
(54) WAFER MANUFACTURING METHOD,
POLISHING
WAFER
APPARATUS, AND
PROCEDE DE PRODUCTION DE PLA-
QUETTES, APPAREIL DE POLISSAGE
ET PLAQUETTE
(71) SHIN-ETSU HANDOTAI CO.,LTD.
[JP/JP]; 4-2, Marunouchi 1-chome, Chiyoda-ku,
Tokyo 100-0005 (JP).
(for all designated States except / pour tous
les États désignés sauf US)
(72, 75) NETSU, Shigeyoshi [JP/JP]; c/o
SHIN-ETSU HANDOTAI CO., LTD. Shirakawa
R & D Center, 150, Aza Ohira,
Oaza Odakura, Nishigo-mura, Nishishirakawa-gun,
Fukushima 961-8061 (JP).
MASUMURA, Hisashi [JP/JP]; c/o
SHIN-ETSU HANDOTAI CO., LTD. Shirakawa
R & D Center, 150, Aza Ohira,