Bulletin 2011/10 - European Patent Office
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(H01J) II.1(1)<br />

H01J 49/46 → (51) H01J 37/244<br />

(51) H01L 21/027 (11) 1 061 560 B1<br />

G03F 7/09<br />

(25) En (26) En<br />

(21) 00304789.1 (22) 06.06.2000<br />

(84) DE FR GB IT NL<br />

(43) 20.12.2000<br />

(30) 11.06.1999 US 330417<br />

(54) • Antireflexzusammensetzung einer Hartmaske<br />

• Antireflective hard mask compositions<br />

• Composition antireflet d'un masque dur<br />

(73) Shipley Company LLC, 455 Forest Street,<br />

Marlborough, MA 01752, US<br />

(72) Pavelchek, Edward K., Stow, Massachusetts<br />

01775, US<br />

(74) Kent, Venetia Katherine, et al, <strong>Patent</strong> Outsourcing<br />

Limited 1 King Street, Bakewell<br />

Derbyshire DE45 1DZ, GB<br />

H01L 21/027 → (51) G03F 7/00<br />

H01L 21/18 → (51) B81C 1/00<br />

H01L 21/316 → (51) C09D 183/04<br />

(51) H01L 21/336 (11) 2 045 837 B1<br />

(25) Fr (26) Fr<br />

(21) 08354062.5 (22) 24.09.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(43) 08.04.2009<br />

(30) 02.<strong>10</strong>.2007 FR 0706902<br />

(54) • Selektive Bildung einer Verbindung, die ein<br />

Halbleitermaterial und ein Metallmaterial in<br />

einem Substrat enthält, mit Hilfe einer<br />

Germaniumoxydschicht<br />

• Selective formation of a compound comprising<br />

a semiconductor material and a<br />

metal material in a substrate, through a<br />

layer of germanium oxide<br />

• Formation sélective d'un composé comprenant<br />

un matériau semi-conducteur et un<br />

matériau métallique dan un substrat, à<br />

travers une couche d'oxyde de germanium<br />

(73) Commissariat à l'Énergie Atomique et aux<br />

Énergies Alternatives, Bâtiment "Le Ponant D"<br />

25, rue Leblanc, 75015 Paris, FR<br />

(72) Nemouchi, Fabrice, 38430 Moirans, FR<br />

(74) Hecké, Gérard, et al, Cabinet Hecké <strong>10</strong>, rue<br />

d'Arménie Europole BP 1537, 38025 Grenoble<br />

Cedex 1, FR<br />

H01L 21/56 → (51) H01L 21/60<br />

(51) H01L 21/60 (11) 1 087 436 B1<br />

C09J 11/04 H01L 21/56<br />

(25) En (26) En<br />

(21) 00117713.8 (22) 17.08.2000<br />

(84) DE FR GB<br />

(43) 28.03.2001<br />

(30) 19.08.1999 JP 23330099<br />

(54) • Klebstoffmaterial und Verfahren zur elektronischen<br />

Stromkreisschaltung<br />

• Adhesive material and electronic circuit<br />

connection method<br />

• Matériau adhésif et méthode de connexion<br />

de circuit électronique<br />

(73) Sony Chemical & Information Device Corporation,<br />

Gate City Osaki East Tower 8F, 1-<br />

11-2, Osaki, Shinagawa-ku, Tokyo 141-0032,<br />

JP<br />

(72) Takeichi, Motohide, Kanuma-shi, Tochigi<br />

322-8502, JP<br />

Shinozaki, Junji, Kanuma-shi, Tochigi 322-<br />

8502, JP<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) TBK-<strong>Patent</strong>, Bavariaring 4-6, 80336<br />

München, DE<br />

H01L 21/66 → (51) C09J 133/00<br />

(51) H01L 21/677 (11) 1 727 193 B1<br />

(25) En (26) En<br />

(21) 060<strong>10</strong>190.4 (22) 17.05.2006<br />

(84) DE<br />

(43) 29.11.2006<br />

(30) 25.05.2005 JP 2005152828<br />

(54) • Behälter für einzelne dünne Platten und<br />

darin verwendete stoßabsorbierende<br />

Stützglieder<br />

• Single thin plate storage container and<br />

shock-absorbing support members used<br />

therein<br />

• Conteneur pour plaques minces individuelles<br />

et éléments de support d'absorption<br />

de chocs utilisés dans ce conteneur<br />

(73) Miraial Co., Ltd., 18-2, Nishi-Ikebukuro 1chome,<br />

Toshima-ku, Tokyo, JP<br />

(72) Nishizaka, Koichi, Kikuchi-shi Kumamotoken,<br />

JP<br />

Emura, Yoichi, Kikuchi-shi Kumamoto-ken,<br />

JP<br />

Obayashi, Tadahiro, Kikuchi-shi Kumamotoken,<br />

JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

H01L 23/12 → (51) H05K 1/14<br />

H01L 23/36 → (51) F23Q 7/00<br />

H01L 23/40 → (51) H05K 13/04<br />

(51) H01L 23/427 (11) 1 649 736 B1<br />

H05K 7/20<br />

(25) De (26) De<br />

(21) 04738807.9 (22) 28.06.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IT LI LU MC NL PL PT RO SE SI SK<br />

TR<br />

(43) 26.04.2006<br />

(86) DE 2004/001361 28.06.2004<br />

(87) WO 2005/015970 2005/07 17.02.2005<br />

(30) 30.07.2003 DE <strong>10</strong>335197<br />

(54) • KÜHLVORRICHTUNG FÜR EIN ELEKT-<br />

RONISCHES BAUELEMENT, INSBESON-<br />

DERE FÜR EINEN MIKROPROZESSOR<br />

• COOLING DEVICE FOR AN ELECTRONIC<br />

COMPONENT, ESPECIALLY FOR A<br />

MICROPROCESSOR<br />

• DISPOSITIF DE REFROIDISSEMENT D'UN<br />

COMPOSANT ELECTRONIQUE, EN PARTI-<br />

CULIER D'UN MICROPROCESSEUR<br />

(73) Liebert Corporation, <strong>10</strong>50 Dearborn Drive,<br />

Columbus, OH 34085, US<br />

(72) FONFARA, Harald, 94551 Lalling, DE<br />

GÖSTL, Herbert, 94227 Zwiesel, DE<br />

MILTKAU, Thorsten, 94469 Deggendorf, DE<br />

EBERL, Markus, 94563 Otzing, DE<br />

MOLLIK, Ralf, 94526 Metten, DE<br />

(74) Heim, Hans-Karl, et al, Weber & Heim<br />

<strong>Patent</strong>anwälte Irmgardstrasse 3, 81479<br />

München, DE<br />

(51) H01L 23/473 (11) 1 340 258 B1<br />

B81B 1/00<br />

(25) En (26) En<br />

(21) 01993188.0 (22) 28.11.2001<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(43) 03.09.2003<br />

(86) US 2001/045063 28.11.2001<br />

(87) WO 2002/052644 2002/27 04.07.2002<br />

(30) 30.11.2000 US 727140<br />

657<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>10</strong>/<strong>2011</strong>) 09.03.<strong>2011</strong><br />

(54) • THERMISCH VERBESSERTE PACKUNG<br />

FÜR MIKROSCHALTUNGEN, UND VER-<br />

FAHREN ZU DEREN HERSTELLUNG<br />

• THERMALLY ENHANCED MICROCIRCUIT<br />

PACKAGE AND METHOD OF FORMING<br />

SAME<br />

• BOITIER DE MICROCIRCUIT THERMIQUE-<br />

MENT RENFORCE ET PROCEDE DE FOR-<br />

MAGE<br />

(73) HARRIS CORPORATION, <strong>10</strong>25 W. Nasa<br />

Blvd., Melbourne, FL 32905, US<br />

(72) NEWTON, Charles, Palm Bay, FL 32902, US<br />

RUMPF, Raymond, Melbourne, FL 32934,<br />

US<br />

GAMLEN, Carol, Melbourne, FL 32901, US<br />

(74) Wuesthoff, Franz, <strong>Patent</strong>anwälte Wuesthoff<br />

& Wuesthoff Schweigerstrasse 2, 81541<br />

München, DE<br />

(60) <strong>10</strong>015491.3 / 2 289 844<br />

(51) H01L 23/528 (11) 1 369 922 B1<br />

H01L 27/02<br />

(25) It (26) En<br />

(21) 02425376.7 (22) 07.06.2002<br />

(84) DE FR GB IT<br />

(43) <strong>10</strong>.12.2003<br />

(54) • Mehrschichtige Metallstruktur eines Spannungsversorgungsringes<br />

mit großem<br />

parasitärem Widerstand<br />

• Multilayer metal structure of supply rings<br />

having large parasitic resistance<br />

• Structure d'un anneau d'alimentation<br />

métallique multicouche avec grande résistance<br />

parasite<br />

(73) STMicroelectronics Srl, Via Olivetti 2, 20041<br />

Agrate Brianza (MB), IT<br />

(72) Montagnana, Marco, 20032 Cormano, IT<br />

(74) Pellegri, Alberto, et al, Società Italiana<br />

Brevetti S.p.A. Via Avegno, 6, 21<strong>10</strong>0 Varese,<br />

IT<br />

H01L 23/544 → (51) C09J 133/00<br />

(51) H01L 23/552 (11) 1 508 917 B1<br />

H01L 23/58<br />

(25) En (26) En<br />

(21) 04254579.8 (22) 30.07.2004<br />

(84) DE FR GB<br />

(43) 23.02.2005<br />

(30) 20.08.2003 JP 2003295958<br />

(54) • Integrierte Halbleiterschaltung<br />

• Semiconductor integrated circuit<br />

• Circuit intégré semiconducteur<br />

(73) Sharp Kabushiki Kaisha, 22-22 Nagaike-cho<br />

Abeno-ku, Osaka 545-8522, JP<br />

(72) Henmi, Takuya, Nara-shi Nara 631-0804, JP<br />

(74) Brown, Kenneth Richard, et al, R.G.C.<br />

Jenkins & Co 26 Caxton Street, London<br />

SW1H 0RJ, GB<br />

H01L 23/58 → (51) H01L 23/552<br />

H01L 27/02 → (51) H01L 23/528<br />

(51) H01L 27/146 (11) 1 420 453 B1<br />

(25) En (26) En<br />

(21) 03025915.4 (22) 12.11.2003<br />

(84) DE FR GB IT NL<br />

(43) 19.05.2004<br />

(30) 13.11.2002 JP 2002329653<br />

(54) • Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung<br />

und Strahlungsbildaufnahmesystem<br />

• Image pickup apparatus, radiation image<br />

pickup apparatus and radiation image<br />

pickup system<br />

• Dispositif de prise d'images, dispositif de<br />

prise d'images de rayonnement et système<br />

de prise d'images de rayonnement

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