From 7-9 October 2009, Leuven, Belgium TABLE II Overall thermal conductivity and relative mode contribution before and after QCs at T = 220 K Factor Factor value MD n/a n/a +Standard QCs +Proposed QCs c v, a ( T ) 3( N −1) k c c v , e v, a ( T ) ( T ) B 0.645 1.037 k TA (W/m-K) 128.615 (33.87%) 82.932 (33.87%) 125.303 (38.62%) k LA (W/m-K) 212.151 (55.87%) 136.797 (55.87%) 180.660 (55.67%) k LO (W/m-K) 35.800 (9.43%) 23.084 (9.43%) 17.310 (5.33%) Total 94.29 % 5.71 % k k ' = k *(3/ π ) TO (W/m-K) (W/m-K) 3.092 (0.82%) 362.549 1.994 (0.82%) 1.218 (0.38%) 233.773 309.866 94.29 % (i.e. an increase of 4.54 % from the values before QCs), while the contribution of the optical modes becomes 5.71 %. The contribution of the LO and TO modes reduces from 9.43 % and 0.82 % before QCs to 5.33 % and 0.38 % after QCs, respectively, and the TA mode increases from 33.87 to 38.62 %. These results are in excellent agreement with recent ab initio predictions [33], in which acoustic modes provide 95% of the contribution to the thermal conductivity and that the contribution of LA is higher than that from the TA mode. Isotope scattering. Based on the experimental data for nat Si and 28 Si [25] at the corrected temperature, the reduction in the thermal conductivity is estimated to be 16.80 % (measured relatively to the nat Si thermal conductivity). Table III shows the MD thermal conductivity before and after QCs including the isotropic scattering term. Before QCs are applied, the deviation of the MD-predicted thermal conductivity with respect to the experimental value is 44.48 % for 28 Si. When QCs and the isotope scattering are applied this difference reduces to 23.48 and 13.94 % respectively. TABLE III Thermal conductivity before and after isotopic scattering at T = 220 K From k k k −1*100 −1*100 (W/m-K) ke( 28 nat Si) ke( Si) MD 362.5 44.48 % +QC 309.9 23.48 % +ISO 265.3 13.94 % k ( 28 e Si) = 250.934 W/m-K [25], ke ( Si) = 232.844 W/m-K [21], k e : experimental thermal conductivity. The inclusion of the isotope scattering term modifies all properties that depend on the phonon relation times. Although, both isotope scattering expressions (Eq. 4) lead to the same value of thermal conductivity, the relative contributions of the modes change. The contribution of the optical modes decreases, while the on from the acoustical modes increases. The acoustical modes contribute 97.6 % when the velocity term is neglected and 98.5 % when is included. Additionally, the contribution of optical modes becomes almost negligible (less that 2.4 %). Fig. 4 shows the mode thermal conductivity as a function of frequency. In terms of frequency, the isotope scattering lowers significantly the contribution of optical modes. For both scattering terms, the contribution of the LO mode reduces more than half, while the one from TO becomes negligible (less than 0.01 %). At the same time, the mode thermal conductivity of the TA does not experience a significant change, while the LA changes as the frequency increases. k m (ω) (W/m-K*s/rad) Before isotope scattering 4 Isotope scattering: A*ω 4 3 x 10-13 LO Isotope scattering: A/v *ω 4 2.5 3.5 g 2 3 1.5 1 TO 2.5 LA 0.5 2 0.95 1 1.05 1.1 x 10 14 1.5 1 TA LO 0.5 TO 0 0 2 4 6 8 10 12 4.5 x 10-12 Frequency (rad/s) x 10 13 Fig. 4 - Contribution to the thermal conductivity of the TA, LA, LO and TO modes before (solid thick line) and after isotope scattering. V. HIGH TEMPERATURE IMPLICATIONS T ≥ θD At high temperatures ( ), both the quantization of the energy and the presence of isotopes are expected to have a minor effect on the reduction of the thermal conductivity. Note that the contribution to the thermal conductivity from the high frequency modes as the temperature of the system is increased would progressively become similar to the one estimated with MD (before QCs). VI. SUMMARY AND CONCLUSIONS In this work a new quantum correction procedure was proposed to correct silicon thermal properties obtained from molecular dynamics. The procedure considers the energy quantization per mode basis and the anharmonic nature of the potential energy function, and involves the use of experimental or analytical specific heat values. In addition, the effect of isotope scattering was analyzed in terms of the change of the mode thermal conductivity. In the standard quantum correction procedure, the specific ©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2009 201 ISBN: 978-2-35500-010-2
7-9 October 2009, Leuven, Belgium heat is corrected by a factor defined as the ratio of the quantum and classic energies ( c v, a( T ) / 3( N − 1) kB ) while the quantization of the energy leads to changes on the contribution of each mode to the specific heat with frequency. These are more severe as the frequency of the modes increases. The changes in the specific heat modify the individual contribution of the modes to the overall thermal conductivity of the crystal. After the new quantum correction procedure is applied, the relative contribution of acoustic modes to the overall thermal conductivity becomes 94.29 % (being k LA > kTA , see Tables II-IV). This result compares very well with recent ab initio calculations [33], which indicate that acoustic modes contribute about 95 % to the total thermal conductivity and that the contribution of LA modes is higher than that from TA modes. In addition, it is found that the proposed QC alternative improves the thermal conductivity prediction when compared with experimental results for nat Si and 28 Si. Despite the variability of the reported thermal conductivity for isotopically enriched 28 Si, our conservative assumption of 16.80 % reduction in the thermal conductivity, leads to a reasonable agreement with experimental results for nat Si. Lastly, when isotope scattering is included, the contribution to the thermal conductivity of the LO and TO modes is further reduced, especially when the group velocity is considered. Most of the contributions to the thermal conductivity still come from the LA and TA modes. At high temperatures, when all modes are thermally excited and the system behaves classically, the effects of the energy quantization and the isotope scattering are negligible. ACKNOWLEDGMENT The authors gratefully acknowledge the funding of the National Science Foundation grant CTS-0103082, the Pennsylvania Infrastructure Technology Alliance (PITA) and NANOPACK. REFERENCES [1] Rudd, R. E., and Broughton, J. Q., 1998, "Coarse-Grained Molecular Dynamics and the Atomic Limit of Finite Elements," Phys. Rev. B, 58(10), pp. R5893-R5896. [2] Xiao, S. P., and Belytschko, T., 2004, "A Bridging Domain Method for Coupling Continua with Molecular Dynamics," Comput. Methods Appl. Mech. Engrg., 193, pp. 1645-1669. [3] Klein, P. A., and Zimmerman, J. A., 2006, "Coupled Atomistic- Continuum Simulations Using Arbitrary Overlapping Domains," Journal of Computational Physics, 213, pp. 86-116. [4] Escobar, R., and Amon, C., 2007, "Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heating Conditions," Journal of Heat Transfer, 129(7), pp. 790-797. [5] Mazumder, S., and Majumdar, A., 2001, "Monte Carlo Study of Phonon Transport in Solid Thin Films Including Dispersion and Polarization," ASME Journal of Heat Transfer, 123, pp. 749-759. [6] Narumanchi, S. V. J., Murthy, J. Y., and Amon, C. H., 2006, "Boltzmann Transport Equation-Based Thermal Modeling Approaches for Hotspots in Microelectronics," Heat and Mass Transfer, 42(6), pp. 478-491. [7] Pop, E., Sinha, S., and Goodson, K., 2006, "Heat Generation and Transport in Nanometer-Scale Transistors," Proceedings of the IEEE, 94(8), pp. 1587-1601. [8] Sverdrup, P., Sinha, S., Asheghi, M., Uma, S., and Goodson, K., 2001, "Measurement of Ballistic Phonon Conduction Near Hotspots in Silicon," Appl. Phys. Lett., 78, pp. 3331-3333. [9] Sinha, S., Schelling, P. K., Phillpot, S. R., and Goodson, K. E., 2005, "Scattering of g-Process Longitudinal Optical Phonons at Hotspots in Silicon," Journal of Applied Physics, 97(2), pp. 023702 (1-9). [10] Klemens, P. G., 1969, Thermal Conductivity, Academic Press, London, Theory of Thermal Conductivity of Solids. [11] Goicochea, J. V., Madrid, M., and Amon, C., 2009, "Thermal Properties for Bulk Silicon Based on the Determination of Relaxation Times Using Molecular Dynamics," ASME Journal of Heat Transfer (in press), HT- 08-1206. [12] Mcgaughey, A. J., and Kaviany, M., 2004, "Quantitative Validation of the Boltzmann Transport Equation Phonon Thermal Conductivity Model Under the Single-Mode Relaxation Time Approximation," Physical Review B, 69(9), pp. 094303(1-11). [13] Goicochea, J. V., Madrid, M., and Amon, C., 2008, "Hierarchical Modeling of Heat Transfer in Silicon-Based Electronic Devices," Orlando, FL., pp. 1006 - 1017. [14] Gomes, C., Madrid, M., Goicochea, J. V., and Amon, C., 2006, "In- Plane and Out-of-Plane Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics," Journal of Heat Transfer, 128(11), pp. 1114-1121. [15] Lee, Y. H., Biswas, R., Soukoulis, C. M., Wang, C. Z., Chan, C. T., and Ho, K. M., 1991, "Molecular-Dynamics Simulation of Thermal Conductivity in Amorphous Silicon," Phys. Rev. B, 43(8), pp. 6573- 6580. [16] Volz, S. G., and Chen, G., 2000, "Molecular-Dynamics Simulation of Thermal Conductivity of Silicon Crystals," Physical Review B, 61(4), pp. 2651-2656. [17] Ziman, J., 1960, Electrons and Phonons: The Theory of Transport Phenomena in Solids, The International Series of Monographs on Physics, Oxford, Clarendon Press, New York. [18] Volz, S. G., and Chen, G., 1999, "Molecular Dynamics Simulation of Thermal Conductivity of Silicon Nanowires," Applied Physics Letters, 75(14), pp. 2056-2058. [19] Li, J., 2000, "Modeling Microstructural Effects on Deformation Resistance and Thermal Conductivity," Ph.D. thesis, MIT, Massachusetts. [20] Ho, C. Y., Powell, R. W., and Liley, P. E., 1972, "Thermal Conductivity of the Elements," Journal of Physical and Chemical Reference Data, 1(2), pp. 279-421. [21] Ho, C. Y., Powell, R. W., and Liley, P. E., 1974, "Thermal Conductivity of the Elements," Journal of Physical and Chemical Reference Data, 3(Suppl. 1), pp. 796. [22] Capinski, W. S., Maris, H. J., Beuser, E., Silier, I., Asen-Palmer, M., Ruf, T., Cardona, M., and Gmelin, E., 1997, "Thermal Conductivity of Isotopically Enriched Si," Applied Physics Letters, 71(15), pp. 2109- 2111. [23] Ruf, T., and Henn, R. W., 2000, "Thermal Conductivity of Isotropically Enriched Silicon," Solid State Communication, 115, pp. 243-247. [24] Gusev, A. V., Gibsin, A. M., Morozkin, O. N., Gavva, V. A., and Mitin, A. V., 2002, "Thermal Conductivity of 28 Si from 80 to 300 K," Inorganic Materials, 38(11), pp. 1100-1102. [25] Kremer, R. K., Graf, K., Cardona, M., Devyatykh, G. G., Gusev, A. V., Gibsin, A. M., Inyushkin, A. V., Taldenkov, A. N., and Pohl, H.-J., 2004, "Thermal Conductivity of Isotopically Enriched 28 Si: revisited," Solid State Communications, 131, pp. 499-503. [26] Morelli, D. T., Hermans, J., Sakamoto, M., and Uher, C., 1986, "Anisotropic Heat Conduction in Diacetylenes," Physical Review Letters, 57, pp. 869-872. [27] Brüesch, P., 1987, Phonons: Theory and Experiments III, Solid-State Sciences, Springer-Verlag, Berlin and Heidelberg. [28] Carruthers, P., 1961, "Theory of Thermal Conductivity of Solids at Low Temperatures," Reviews of Modern Physics, 33(1), pp. 92-138. [29] Klemens, P. G., 1958, Solid State Physics, Academic Press, New York, Thermal Conductivity and Lattice Vibrational Modes. [30] Desai, P. D., 1986, "Thermodynamic Properties of Iron and Silicon," Journal of Physical and Chemical Reference Data, 15(3), pp. 967-083. [31] Brüesch, P., 1982, Phonons: Theory and Experiments I, Solid-State Sciences, Springer-Verlag, Berlin and Heidelberg. [32] Tiwari, M. D., and Agrawal, B. K., 1971, "Analysis of the Lattice Thermal Conductivity of Germanium," Phys. Rev. B, 4(10), pp. 3527- 3532. [33] Broido, D. A., Malorny, M., Birner, G., Mingo, N., and Stewart, D. A., 2007, "Intrinsic Lattice Thermal Conductivity of Semiconductors from First Principles," Appl. Phys. Lett. , 91(231922), pp. 1-3. ©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2009 202 ISBN: 978-2-35500-010-2
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