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Online proceedings - EDA Publishing Association

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7-9 October 2009, Leuven, Belgium<br />

B. Static Analysis<br />

To analyze the initial response of the proposed device,<br />

static analysis is performed. This analysis calculates the<br />

results for the stress distribution, displacement distribution<br />

and mechanical deformation of the structure. In case of<br />

the thermally actuated microdevices like the proposed<br />

one, static analysis generally comprised of thermalelectrical<br />

and thermal-stress analyses. Thermal-electrical<br />

analysis solves coupled thermal electrical equations<br />

whereas thermal-stress analysis calculates mechanical<br />

stresses in the device due to the thermal loads calculated<br />

during the thermal-electrical analysis [10].<br />

Predicted displacement vs. voltage and temperature vs.<br />

voltage plots are presented in Fig. 7. Static analysis is<br />

carried out over a range of applied static voltages from<br />

0.10-0.13V with an increment of 0.05V. The results Fig. 9. Temperature profile predicted by the Static analysis at 0.1V dc.<br />

showed that achieved displacements and temperatures are<br />

the function of the V 2 at constant resistivity. A drive<br />

C. Dynamic Analysis<br />

displacement of 109 µm/V along with a temperature rise FEA based dynamic simulation results are shown in<br />

of 640 o C/V predicts that voltage-stroke ratio of the Fig. 10. The thermal actuator was driven by a sinusoidal<br />

proposed device is very high in comparison with voltage of 0.1V at 2.51 kHz, half of the operating<br />

electrostatic comb drives. Displacement and temperature frequency as one sinusoidal cycle results in two complete<br />

profile of the device at 0.10V DC is shown in Fig. 8 and 9. cycles of the thermal actuator [4]. The predicted drive<br />

A predicted displacement of 4.88 µm with a temperature displacement achieved by the proof mass is 0.28µm<br />

of 52 o /C is achieved by the device at this voltage.<br />

(shown blue in Fig. 10(a)). The temperature profile<br />

developed across the device when subjected to the same<br />

voltage excitation signal is shown in Fig. 10 (b).<br />

Fig. 7. Predicted drive direction displacement and maximum temperature<br />

at different applied static voltages.<br />

(a)<br />

Fig. 8. Displacement profile predicted by the Static analysis at 0.1V dc.<br />

(b)<br />

Fig. 10. (a) Displacement and (b) temperature profile predicted when the<br />

Dynamic analysis is carried at 0.1V ac applied at 2.51kHz.<br />

©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2009 43<br />

ISBN: 978-2-35500-010-2

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