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7-9 October 2009, Leuven, Belgium Fig. 1. Schematic of overheat protection circuit. Fig. 2. Detailed schematics of PTAT sensor. ©EDA Publishing/THERMINIC 2009 81 ISBN: 978-2-35500-010-2
7-9 October 2009, Leuven, Belgium 0.8 0.75 Voltage [V] 0.7 0.65 0.6 Sensor Localization 0.55 0.5 0.45 0 20 40 60 80 100 120 140 160 Temp [C] Fig. 3. Simulations of the output signal from the sensor. III. SIMULATIONS The whole system containing the PTAT sensor, as already mentioned in previous section, was simulated in the CADENCE environment. In order to simulate this circuit, the transistor models from the austriamicrosystems ® (AMS) 0.35 μm high voltage technology were used. This technology was chosen for the practical realization of the ASIC. The simulations confirmed that the behavior of the sensor conforms to the design specifications. With increasing temperature, the sensor output voltage decreases with the negative slope of –1.72 mV/K. When temperature reaches 150 °C, the additional current mirror is switched off and the current delivered to the bipolar transistor is twice smaller. This means that the output voltage rapidly drops down by some 25 mV what allows the generation of logic one at the overheat warning pin, which is clearly visible in Fig. 3. When temperature decreases, the output voltage increases again. When the temperature reaches 130 °C, the output voltage rapidly grows and the warning signal is switched off, which can be observed in Fig. 4. Fig. 5. Photo of a die. IV. ASIC REALIZATION The presented overheat protection circuit containing the PTAT sensor, as already mentioned, was manufactured in the thermal test ASIC designed in the Department of Microelectronics & Computer Science at the Technical University of Lodz, Poland. The location of the sensor in the circuit layout is shown in Fig. 5. For full description of the test ASIC, refer to [6]-[7]. The sensor layout, presented in Fig. 6, consists of 9 PMOS transistors which are connected as current mirrors. Besides, there are 3 bipolar transistors and 1 polysilicon resistor. All the devices are placed so as to obtain the minimal area in the ASIC. Because the circuit contains 9 large power transistors acting as heat sources, the total area of the whole ASIC amounts to almost 20 mm 2 . The dimensions of the PTAT sensor alone are 125 μm × 90 μm, so it is a very small sensor which can be used in different integrated circuits, where precise temperature measurements are necessary. Obviously, the PTAT sensor together with the overheat warning system occupies slightly bigger area. Voltage [V] 3 2.5 2 1.5 1 0.5 MOS Transistors Bipolar Transistors Resistor 0 0 20 40 60 80 100 120 140 160 Temp [C] Fig. 4. Simulations of the overheat warning signal. Fig. 6. Layout of PTAT sensor. ©EDA Publishing/THERMINIC 2009 82 ISBN: 978-2-35500-010-2
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International Workshop on THERMal I
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7-9 October 2009, Leuven, Belgium
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Poster session: Introduction* 7-9 O
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x −1 V(x) = , f(y) = x + 1 y + 1
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of 75 o C for fair comparison. Only
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TABLE I MODEL PARTS CHARACTERISTICS
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ETF ∫ VCO f vco (T) output 7-9 Oc
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profile describes the temperature v
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[5] P. Lee and S. Garimella, “Hot
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