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Online proceedings - EDA Publishing Association

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7-9 October 2009, Leuven, Belgium<br />

by the isolation oxide, nitride layers, anchor metal and<br />

IV. FEM METHODOLOGY & RESULTS<br />

nickel layers.<br />

To verify design concept and<br />

device parameters, device<br />

level FEM simulation methodology for the proposed<br />

microgyroscope is devised in this section.<br />

Thermoelectromechanical (TEM) analysis module of the<br />

MEMS Design software IntelliSuite has been used for this<br />

purpose.<br />

3D Builder is used to build and mesh the three-<br />

dimensional geometry of the<br />

MEMS structure before<br />

transferring to TEM module to assign material properties,<br />

loads and boundaries to fully<br />

analyze a device in the<br />

static, frequency and dynamic domain. Simpler and faster<br />

simulations like modal and static analyses were performed<br />

prior to lengthy dynamic simulations to understand the<br />

initial behavior of the device.<br />

A. Modal Analysis<br />

Fig. 3. Microgyroscope fabricated through MetalMUMPs process First of all modal analysis was carried out to predict the<br />

using L-Edit of MEMSPro.<br />

natural frequencies and their respective mode shape for<br />

the proposed microgyroscope. While calculating natural<br />

frequencies and associated mode shapes, a residual stress<br />

of 100 MPa has been incorporated with other<br />

thermophysical properties of nickel (Ni) for accurate<br />

results [9].<br />

Fig. 6, (a) and (b) show the respective drive and sense<br />

mode shape at 5.73 kHz and 5.02 kHz. A slight difference<br />

in the natural frequency of both drive and sense mode is<br />

intentionally made to achieve a larger bandwidth,<br />

compromising the drive displacement at resonance.<br />

(a)<br />

(b)<br />

Fig. 4. Cross sectional views of a microgyroscope (a) 3D view and<br />

(b) 2D view<br />

(a)<br />

Fig. 5. Process flow for the fabrication of microgyroscope using<br />

MetalMUMPs in MEMSPro (a) N-type silicon wafer (b) 2µm<br />

thick isolation oxide layer (c) patterning of Oxide<br />

1 layers (d) patterning<br />

of 0.7µm thick Polysilicon layer (e) patterning of<br />

anchor metal layer (f)<br />

patterning of 20µm electroplated structural layer of Ni and trench etch in<br />

the substrate.<br />

(b)<br />

Fig. 6. Modal analysis results (a) Drive mode at 5.37 kHz and (b)<br />

Sense mode at 5.02 kHz.<br />

©<strong>EDA</strong> <strong>Publishing</strong>/THERMINIC 2009 42<br />

ISBN: 978-2-35500-010-2

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