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7-9 October 2009, Leuven, Belgium Devices fabricated on wafers with TSV interconnecting elements are exposed to additional mechanical stress related to the IC layout and wafer shape (Fig. 1). This paper discusses various cases of stress distribution based on simulation results performed by Coventor [5] and TCAD [6] packages. A Fig. 3. Mechanical design drawing (3D model), without and with encapsulation [7]. Even if all standalone (non 3D) modules have been correctly designed, simulated and would perfectly operate if assembled as standalone devices, if the device profits from 3D integration technique its functionality may be affected by various side effects not taken into consideration during design. Such a device not optimized for 3D integration during design process – may fail. 3D integrated device comprises various modules. Fig. 2. a) V T(P) - Threshold Voltage (V T) on Stress Tensor (P) sensitivity for various Stress Tensor-Channel Angle (α). NMOS; L=130[nm]; Shallow S/D; UDS=0.05[V] b) Threshold voltage variation for 350nm technology for various mechanical stress levels and various angles between mechanical force and source-drain direction It is especially important for analogue blocks and low noise amplifiers. Electrical simulations performed in TCAD show that digital blocks are more resistant to the mechanical stress then analogue ones. Sample simulations performed in TCAD for MNOS and PMOS transistors show that mechanical stress relative sensitivity of complementary MOS devices is complementary as presented on Fig. 2b. Selected results of TCAD simulations performed for simple digital blocks like inverters and NAND digital gates also have been performed. Simulated gates have been modeled for AMS 350nm technology. Simulation results confirm that for moderate levels of mechanical stress (mechanical stress level should not exceed the level of 500MPa) parasitic stress does not significantly affect transfer function of digital circuits. Modeling and simulation results of the integrated, intelligent health monitoring system 3D model [7] have been presented. Such a system is the e-Cubes project demonstrator sample. General idea is shown on the Fig. 3. Significant speedup and improvements of product development stages will be the profit of the project. From the reliability point of view thermomechanical behavior of the whole system is the most important parameter to be taken into consideration. B Fig. 4. 3D model of the e-Cubes demonstrator for health monitoring designed in CoventorWare with the mesh ready for multidomain modeling and simulation by FE methods. Each of them affects neighboring modules in thermal, mechanical, electrical, electromagnetic way. Probability that a single module affects another in its neighborhood (e.g. by high temperature transfer) is quite high. Therefore the module arrangement and its complex multidomain simulation are so important on each design stage. For this simulation 3D model designed in CoventorWare have been used (Fig. 4). 3D integration technique has been simulated along with applied, real thermo-mechanical boundary conditions like power dissipation present in different modules. Also selected mechanical issues regarding the encapsulation methodology have been done. Thermal simulations results show that under assumed boundary conditions temperature does not increase too much across the whole demonstrator device structure Sample results of the thermal investigation are shown on the Fig. 5. The aim of this part of the simulation was verification of the temperature distribution under high and low power operating modes. 300 K ambient temperature has been assumed as one of boundary conditions applied for this simulation as well as convection and radiation on the bottom and upper surfaces. For applied boundary conditions in the worst case temperature increases to 325 K for high power mode and 310 K for low power mode. Apart from the thermal phenomena mechanical properties of the device and used materials are important from reliability point of view, especially under higher range device temperatures. The main goal of performed simulation was to ©EDA Publishing/THERMINIC 2009 85 ISBN: 978-2-35500-010-2
7-9 October 2009, Leuven, Belgium check if and how big is mechanical displacement observed within the device for particular modes of the device fixing. Fix Applied boundary conditions have been the same as for high power mode. Analysis of displacement simulation results (see Fig. 6) lead to a following major conclusion: displacement and mechanical stress distribution are much lower if there are more fixed points applied inside the device. Fix A Temperature [K] High Power A Low Power Temperature [K] 325,1 325,0 324,9 324,8 324,7 324,6 324,5 324,4 324,3 324,2 0 5000 10000 15000 20000 Distance [um] Temperature [K] 310,4 310,4 310,4 310,4 310,4 310,4 310,4 310,4 0 5000 10000 15000 20000 Distance [um] B Fig. 5.Temperature distribution in high and low power modes: a) 3D model view; b) temperature distribution on the top-center surface of the 3D model III. CONCLUSIONS Semiconductor devices are sensitive to the mechanical stress (Fig. 1, Fig. 2, Fig. 3). As it is dependent on the device temperature additional simulations it should be performed whether device will operate or fail due to the direct temperature parameters variation or indirect dependence accompanied by mechanical stress (Fig. 2). The complete design, verification, fabrication circle has been elaborated and is still under development. Several software loop components are still under research, development or testing. Finally it should improve the device fabrication field affected by deterministic and non deterministic environmental factors. One of deterministic is mechanical stress dependent on the device temperature. Complex multi domain simulation technique is a must for contemporary electronic design. ACKNOWLEDGMENT This work has been partially supported by the European Commission under support-number IST-026461 (European project: 3D Integrated Micro/Nano Modules For Easily Adapted Application, acronym e-CUBES [1]) and CP-FP 213969-2 (European project: Customer-Oriented Product Engineering of Micro and Nano Devices, acronym CORONA [2]). We would like to thank e-Cubes project and CORONA project Partners for the excellent and fruitful collaboration. Displacement [µm] B Fig. 6. View of the two different fixation types (a) and view of the plastic deformation (plastic deformation factor x100! – b) and displacement [µm]. REFERENCES [1] More information available at www.ecubes.org [2] More information available at www.corona-mnt.eu [3] P.Schneider, S.Reitz, A.Wilde, G.Elst, P.Schwarz, “Towards a Methodology for Analysis of Interconnect Structures for 3D- Integration of Micro Systems”, Proc. Symposium on Design, Test, Integration and packaging DTIP’07, Stresa, Italy (2007). [4] Bernhard Wunderle, Eberhard Kaulfersch, Peter Ramm, Bernd Michel and Herbert Reichl, “Thermo-Mechanical Reliability of 3Dintegrated Microstructures in Stacked Silicon”, Proc. 2006 MRS Fall Meeting, November 27 - December 1, 2006, Boston. [5] More information available at www.coventor.com [6] More information available at http://www.synopsys.com [7] Piet van Engen, Ric van Doremalen, Wouter Jochems, Ad Rommers, Shi Cheng, Anders Rydberg, Thomas Fritzsch, Jürgen Wolf, Walter De Raedt, Philippe Müller, Eduardo Alarcon, Mihai Sanduleanu, “3D Si-level integration in wireless sensor node”, Proceedings of the Smart Systems Integration 2009 conference, page 150-157, 10/11 March 2009, Belgium Brussels. ©EDA Publishing/THERMINIC 2009 86 ISBN: 978-2-35500-010-2
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