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7-9 October 2009, Leuven, Belgium WORKSHOP COMMITTEE: General Chair: Vice General Chair: Programme Chair: B. Courtois, CMP Grenoble, France M. Rencz, BUTE, Budapest, Hungary T. Baelmans, KU Leuven, Belgium Local Organizing Committee: B. Vandevelde, IMEC, Belgium T. Persoons, KU Leuven, Belgium PROGRAMME COMMITTEE: Y.C. Gerstenmaier, Siemens AG, Germany I. Barsony, KFKI-ATKI, Hungary H. Chiueh, National Chiao Tung U., Taiwan A. Daniel, Intel, USA G. De Mey, Ghent U., Belgium R. Egawa, Tohoku U., Japan W. Faris, IIUM, Malaysia S. Garimella, Purdue U., West Lafayette, USA Y. Gianchandani, U. of Michigan, USA A. Glezer, The Georgia Inst. of Techno., USA B. Michel, IBM Zurich, Rueschlikon, Switzerland V. Natarajan, Intel India, Bangalore, India A.o Rubio, UPC, Spain M-N. Sabry, U. Française d’Égypte, Egypt A. Shakouri, U. of California, USA E. Suhir, U.C Santa Cruz, USA G. Wachutka, TU München, Germany F. Udrea, U. of Cambridge, UK A. Poppe, BUTE, Budapest, Hungary B. Guenin, Sun Microsystems, USA K. Chakrabarty, Duke, USA D. Blackburn, NIST, USA A. Aranyosi, Electronic Cooling Solutions Inc. T. Zahner, OSRAM, Germany A. Napieralski, TU Lodz, Poland P. Raad, South. Methodist U., USA J. Janssen, NXP Semiconductors, Nijmegen, The Netherlands L. Codecasa, Polit. di Milano, Italy Y. Scudeller, E.Polytech. U. Nantes, France H. Pape, Infineon Techn., Germany V. Tsoi, Huawei Techno, Kista, Sweden T. Baba, Nat. Metrology Institute Tsukuba, Japan F. Christiaens, Alcatel Bell, Belgium J. Parry, Flomerics, Hampton Court, UK M. Shin, Myong Ji U., Korea P. Rodgers, The Petroleum Inst., UAE A. Tay, NUS, Singapore W. Claeys, U. Bordeaux, France N. Taketoshi, AUST, Ivbaraki, Japan K. Yazawa, Sony, Tokyo, Japan A-C. Pliska, CSEM, Neuchâtel, Switzerland ©EDA Publishing/THERMINIC 2009 III ISBN: 978-2-35500-010-2
7-9 October 2009, Leuven, Belgium ©EDA Publishing/THERMINIC 2009 IV ISBN: 978-2-35500-010-2
Page 1 and 2: International Workshop on THERMal I
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Page 9 and 10: Poster session: Introduction* 7-9 O
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Page 21 and 22: x −1 V(x) = , f(y) = x + 1 y + 1
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OASIS files Final 2D layout design_
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Thermal behaviour causes some varia
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on devices of long-term storage at
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Fig. 3. Standard package simulation
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∂ 2 T ∂ x ∂2 T T 2 ∂ y 2
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q h T h 7-9 October 2009, Leuven, B
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is used to model the forward polari
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III. SUMMARY In this study it was s
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where V is open-circuit voltage, r
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V. THERMAL MATCHING IN LOW-DIMENSIO
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Fig. 8. Low-power wireless medical
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III. FINITE ELEMENT MODELLING OF BG
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I OLED 7-9 October 2009, Leuven, Be
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Fig. 5 Computed absolute temperatur
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ETF ∫ VCO f vco (T) output 7-9 Oc
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profile describes the temperature v
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In Fig. 9 (a) the same integer work
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meshes with highest heat removal ra
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[5] P. Lee and S. Garimella, “Hot
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In contrast to earlier results pres
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hosing fittings etc.) were ‘off t
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The spray boiling curves obtained i
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along the measure zone over the hea
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III. TEMPERATURE AND THICKNESS DEPE
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an increasing function of its TE fi
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onding it was compressed down to ~6
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