Superconducting Technology Assessment - nitrd
Superconducting Technology Assessment - nitrd
Superconducting Technology Assessment - nitrd
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INTRODUCTION TO SUPERCONDUCTOR<br />
SINGLE FLUX QUANTUM CIRCUITRY<br />
The Josephson junction (JJ) is the intrinsic switching device in superconductor electronics. Structurally a JJ is a<br />
thin-film sandwich of two superconducting films separated by a very thin, non-superconducting, barrier material.<br />
For the junctions of interest here, the superconductors are Nb and the barrier material is a dielectric, aluminum<br />
oxide. The barrier is sufficiently thin, ~1nm, that both normal electrons and superconducting electron pairs can<br />
tunnel through the barrier.<br />
Electrically, a tunnel junction between normal metals is equivalent to an ohmic resistor shunted by a capacitor.<br />
If the metals are superconductors, however, electron pairs can tunnel at the same rate as normal electrons. Only<br />
pairs can tunnel at zero voltage, while both pairs and normal electrons tunnel if a voltage appears across the junction.<br />
Pair tunneling gives rise to a third parallel channel, resulting in unique electrodynamics and highly-nonlinear<br />
current-voltage characteristics.<br />
I c R d<br />
Current<br />
Figure 1. Equivalent circuit of Josephson junctions. I C represents the nonlinear switch.<br />
JJs are characterized by the equivalent circuit shown in Figure 1, where I C is the critical current (maximum current<br />
at zero voltage) of the junction, C is the capacitance, and R d is the resistance. C is capacitance of the junction.<br />
R d is the parallel combination of the internal junction resistance and any external shunt. Low-inductance shunts are<br />
commonly employed in RSFQ circuits to control junction properties. The intrinsic junction resistance is very voltage<br />
dependent as shown in Figure 2a. It is very large compared with typical external shunts for voltages below the energy<br />
gap, V g ~2.7 mV for niobium (Nb), and very small at the gap voltage. Above the gap voltage, the resistance<br />
becomes ohmic, with a value R N, the resistance of the junction in the non-superconducting state. The product I CR N<br />
is approximately V g.<br />
C<br />
�<br />
Voltage<br />
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