Superconducting Technology Assessment - nitrd

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04 By 2010 production capability for high density IC chips will be achievable by application of manufacturing technologies and methods similar to those used in the semiconductor industry. ————— Yield and manufacturability of known good die can be established and costs understood. ————— The 2010 capability can be used to produce chips with speeds of 50 GHz or higher and densities of 1-3 million JJs per cm 2 . ————— Beyond the 2010 time frame, if development continues, a production capability for chips with speeds of 250 GHz and densities comparable with today’s CMOS is achievable. ————— Total Investment over five-year period: $125 million.
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SUPERCONDUCTING TECHNOLOGY ASSESSME
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Summary of Findings The STA conclud
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CHAPTER 02: ARCHITECTURAL CONSIDERA
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CHAPTER 06: SYSTEM INTEGRATION 6.1
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INDEX OF FIGURES CHAPTER 01: INTROD
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APPENDIX G: ISSUES AFFECTING RSFQ C
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CONTENTS OF CD EXECUTIVE SUMMARY CH
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LIMITATIONS OF CURRENT TECHNOLOGY C
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State of the Industry Today, expert
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01 This document presents the resul
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1.2 LIMITATIONS OF CONVENTIONAL TEC
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1.3.2 RSFQ ATTRIBUTES Important att
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The end point of this roadmap defin
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Structurally, a high-end computer w
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16 ■ Chalmers University in Swede
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Random Access Memory Options Random
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Compact Package Feasible Thousands
Page 35 and 36: MCMs The design of MCMs for SCE chi
Page 37 and 38: 02 No radical execution paradigm sh
Page 39 and 40: The key challenges at the processor
Page 41 and 42: 2.2 MICROPROCESSORS - CURRENT STATU
Page 43 and 44: 2.2.3 CORE1 BIT-SERIAL MICROPROCESS
Page 45 and 46: Potential Problems The initial vers
Page 47 and 48: The microarchitecture of supercondu
Page 49 and 50: 2.5 MICROPROCESSORS - CONCLUSIONS A
Page 51: 2.7 MICROPROCESSORS - FUNDING In th
Page 54 and 55: SUPERCONDUCTIVE RSFQ PROCESSOR AND
Page 56 and 57: 3.1 RSFQ PROCESSORS The panel devel
Page 58 and 59: Circuits/ Organizations Flux-1/ NG,
Page 60 and 61: 3.1.2 RSFQ PROCESSORS - READINESS F
Page 62 and 63: 3.1.3 RSFQ PROCESSORS - ROADMAP The
Page 64 and 65: 3.1.5 RSFQ PROCESSORS - ISSUES AND
Page 66 and 67: Since these memory concepts are so
Page 68 and 69: Simulations show that the input int
Page 70 and 71: SFQ RAM Status The results of five
Page 72 and 73: Investment for SFQ Memory The inves
Page 74 and 75: 4MB MRAM BIT CELL: 1 MTJ & 1 TRANSL
Page 76 and 77: The roadmap identifies early analyt
Page 78 and 79: MRAM Major Issues and Concerns Mate
Page 80 and 81: 3.3 CAD TOOLS AND DESIGN METHODOLOG
Page 82 and 83: Issues and Concerns Present simulat
Page 84 and 85: Investment The investment estimated
Page 88 and 89: SUPERCONDUCTIVE CHIP MANUFACTURE Th
Page 90 and 91: Technology Node Current Density Sup
Page 92 and 93: All IC chips on completed wafers un
Page 94 and 95: Table 4-3 lists the major active in
Page 96 and 97: TABLE 4-4. READINESS OF RSFQ CHIP F
Page 98 and 99: Ground Plane Counter/B arrier/Base
Page 100 and 101: Figure 4-5. Projections of RSFQ cir
Page 102 and 103: The extensive modeling of defect de
Page 104 and 105: The panel believes that the most co
Page 106 and 107: Process stability is key to the suc
Page 108 and 109: The panel has described an aggressi
Page 110 and 111: INTERCONNECTS AND SYSTEM INPUT/OUTP
Page 112 and 113: 5.1 OPTICAL INTERCONNECT TECHNOLOGY
Page 114 and 115: Univ. of Colorado Univ. of Texas at
Page 116 and 117: 5.1.4 OPTICAL INTERCONNECT TECHNOLO
Page 118 and 119: TABLE 5-4. FUNDING FOR ROOM TEMPERA
Page 120 and 121: Josephson output interfaces have de
Page 122 and 123: PROCESSOR MEMORY L1 MEMORY L2 MEMOR
Page 124 and 125: 5.4.4 DATA ROUTING: 4 K RSFQ TO 4 K
Page 126 and 127: SYSTEM INTEGRATION System integrati
Page 128 and 129: Figure 6.3. A multi-chip module wit
Page 130 and 131: ■ Find a vendor willing to custom
Page 132 and 133: 2-4 layers 4-16 layers � 16 - 100
Page 134 and 135: 6.3 ENCLOSURES AND SHIELDS TABLE 6-
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6.3.5 ENCLOSURES AND SHIELDS - ROAD
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Large Cryocoolers There are two Eur
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6.5 POWER DISTRIBUTION AND CABLES S
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6.5.2 POWER DISTRIBUTION AND CABLES
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6.6. SYSTEM INTEGRITY AND TESTING B
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133
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TERMS OF REFERENCE Date: 10 Septemb
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137
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PANEL MEMBERS John T. Pinkston (Cha
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141
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GLOSSARY BER Bit Error Rate CDR Cri
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SIA Silicon Industry Association TE
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INTRODUCTION TO SUPERCONDUCTOR SING
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Single flux quantum is the latest g
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SFQ logic operates by generating, s
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153
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SOME APPLICATIONS FOR RSFQ The prim
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Each class will utilize RSFQ logic
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In imaging and surveillance systems
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SYSTEM ARCHITECTURES System-level H
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CNET Crossbar DRAM-PIM 16 TB Since
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Software Considerations Program exe
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167
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ISSUES AFFECTING RSFQ CIRCUITS Marg
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Yield Figure 2. Yield as a function
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Different sections of a large chip,
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Various moat protocols have been pr
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MRAM TECHNOLOGY FOR RSFQ HIGH-END C
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Potential for Scaling and Associate
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Integrated MRAM and RSFQ Electronic
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Stand-alone Cryogenic MRAM Whether
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Superconductor Integrated Circuit F
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Fig. 1. Cross section of NGST’s 8
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Fig. 2. Current density @t A versus
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Fig. 5. SEM photograph of a 1.0-"m
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Fig. 10. SEM photograph showing the
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Fig. 12. Trend chart of leakage con
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Fig. 15. Typical current-voltage ch
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[6] K. B. Theobald, G. R. Gao, and
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[90] L. A. Abelson, S. L. Thomasson
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CAD PRESENT CAD CAPABILITY The inte
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Fig. 3. The Symbol View is instanci
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Fig. 5. The Physical Layout View us
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Fig. 7. VHDL simulation performed o
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Fig. 9. First-pass success is routi
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DATA SIGNAL TRANSMISSION ABSTRACT T
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Some studies, such as those at Inte
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A development in long haul communic
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3.3 THE 4K-INTERMEDIATE TEMPERATURE
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There is another option to employ D
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TABLE 1. COMPONENT TECHNOLOGY DEVEL
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6. FUNDING There are efforts that w
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MULTI-CHIP MODULES AND BOARDS In or
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Lead Inductance (pH) 1,000 100 10 T
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For system-in-stack purposes, it wa
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Enclosures and Shields Enclosures a
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Several issues need to be resolved
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The Northrop Grumman Space Technolo
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Another issue is the cost of the re
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To maximize both the magnetic and r
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