- Page 1 and 2: SUPERCONDUCTING TECHNOLOGY ASSESSME
- Page 3 and 4: Summary of Findings The STA conclud
- Page 5 and 6: CHAPTER 02: ARCHITECTURAL CONSIDERA
- Page 7 and 8: CHAPTER 06: SYSTEM INTEGRATION 6.1
- Page 9 and 10: INDEX OF FIGURES CHAPTER 01: INTROD
- Page 11 and 12: APPENDIX G: ISSUES AFFECTING RSFQ C
- Page 13 and 14: CONTENTS OF CD EXECUTIVE SUMMARY CH
- Page 15 and 16: LIMITATIONS OF CURRENT TECHNOLOGY C
- Page 17 and 18: State of the Industry Today, expert
- Page 19 and 20: 01 This document presents the resul
- Page 21 and 22: 1.2 LIMITATIONS OF CONVENTIONAL TEC
- Page 23 and 24: 1.3.2 RSFQ ATTRIBUTES Important att
- Page 25 and 26: The end point of this roadmap defin
- Page 27 and 28: Structurally, a high-end computer w
- Page 29 and 30: 16 ■ Chalmers University in Swede
- Page 31 and 32: Random Access Memory Options Random
- Page 33 and 34: Compact Package Feasible Thousands
- Page 35 and 36: MCMs The design of MCMs for SCE chi
- Page 37 and 38: 02 No radical execution paradigm sh
- Page 39 and 40: The key challenges at the processor
- Page 41 and 42: 2.2 MICROPROCESSORS - CURRENT STATU
- Page 43 and 44: 2.2.3 CORE1 BIT-SERIAL MICROPROCESS
- Page 45 and 46: Potential Problems The initial vers
- Page 47 and 48: The microarchitecture of supercondu
- Page 49: 2.5 MICROPROCESSORS - CONCLUSIONS A
- Page 54 and 55: SUPERCONDUCTIVE RSFQ PROCESSOR AND
- Page 56 and 57: 3.1 RSFQ PROCESSORS The panel devel
- Page 58 and 59: Circuits/ Organizations Flux-1/ NG,
- Page 60 and 61: 3.1.2 RSFQ PROCESSORS - READINESS F
- Page 62 and 63: 3.1.3 RSFQ PROCESSORS - ROADMAP The
- Page 64 and 65: 3.1.5 RSFQ PROCESSORS - ISSUES AND
- Page 66 and 67: Since these memory concepts are so
- Page 68 and 69: Simulations show that the input int
- Page 70 and 71: SFQ RAM Status The results of five
- Page 72 and 73: Investment for SFQ Memory The inves
- Page 74 and 75: 4MB MRAM BIT CELL: 1 MTJ & 1 TRANSL
- Page 76 and 77: The roadmap identifies early analyt
- Page 78 and 79: MRAM Major Issues and Concerns Mate
- Page 80 and 81: 3.3 CAD TOOLS AND DESIGN METHODOLOG
- Page 82 and 83: Issues and Concerns Present simulat
- Page 84 and 85: Investment The investment estimated
- Page 87 and 88: 04 By 2010 production capability fo
- Page 89 and 90: Table 4-1 summarizes the roadmap fo
- Page 91 and 92: 4.1 SCE IC CHIP MANUFACTURING - SCO
- Page 93 and 94: Significant activity in the area of
- Page 95 and 96: 4.3 SCE CHIP FABRICATION FOR HEC -
- Page 97 and 98: The superconductive IC chip fabrica
- Page 99 and 100: Table 4-6 shows how gate speed depe
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Parameter spreads in superconductiv
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4.6 ROADMAP AND FACILITIES STRATEGY
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Figure 4-6. Timeline for developmen
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A potential savings of ~40% in the
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05 Packaging and chip-to-chip inter
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98 Data Communication Requirement R
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For further discussions of the opti
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5.1.3 OPTICAL INTERCONNECT TECHNOLO
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In this case, an optical receiver w
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Examples of what has been achieved
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5.3.4 OUTPUT: 4 K RSFQ TO ROOM TEMP
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Figure 5-4. Superconducting 16x16 c
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06 The design of secondary packagin
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For this study, the readiness of th
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6.1.3 MULTI-CHIP MODULES AND BOARDS
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6.2. 3-D PACKAGING Conventional ele
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6.2.3. 3-D PACKAGING - ISSUES AND C
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Several companies have demonstrated
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In selecting the cooling approach f
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Another issue is the cost of the re
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Some of the thermal and electrical
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Optical interconnects may require t
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6.6.4 SYSTEM INTEGRITY AND TESTING
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Appendix A
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■ Construct a detailed supercondu
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Appendix B
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140 George Cotter Nancy Welker Doc
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Appendix C
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144 TERMS/DEFINITIONS IHEC Integrat
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Appendix D
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The time-dependent behavior of this
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RSFQ electronics is faster and diss
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Similar to CMOS, the irreducible po
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Appendix E
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The report further identified four
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Analog high temperature superconduc
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Appendix F
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Only one significant effort to arch
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Execution Models Organizing hardwar
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Development Issues and Approaches T
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Appendix G
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The two-junction comparator, the ba
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Bias Currents A major cause of degr
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Power and bias current Power is dis
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Appendix H
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SMT MRAM Another direct selection s
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Speed and Density The first planned
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0.08 0.06 0.04 0.02 30 40 50 60 70
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Appendix I
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Table 1 Representative Nb and NbN-B
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ground plane may be located either
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Fig. 4. Junction fabrication proces
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Table 6 Junction Array Summary of T
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Fig. 11. Ground plane planarization
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B. Yield Yield measurements are an
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Fig. 17. Photograph of the FLUX-1r1
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[47] B. Bumble, H. G. LeDuc, J. A.
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Appendix J
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Fig. 2. The Schematic View describe
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Fig. 4. The VHDL View captures the
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Fig. 6. LMeter is specialized softw
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Fig. 8. Layout-versus-Schematic ver
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Appendix K
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1. CURRENT STATUS OF OPTICAL INTERC
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1.2. CURRENT OPTICAL INTERCONNECT R
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If technology, power, or cost limit
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3.4 COARSE VS. DENSE WAVE DIVISION
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3.5 DEVELOPMENTS FOR LOW TEMPERATUR
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5. ROADMAP The roadmap below shows
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Appendix L
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The bandwidth, chip density and int
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While using short flex cables is th
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We must note that the reparability
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Figure 7. A typical cryocooler encl
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Small Cryocoolers Among commercial
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Although cooling of the 4 K circuit
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Supplying DC current to all of the
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These properties enable the possibi
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