Superconducting Technology Assessment - nitrd
Superconducting Technology Assessment - nitrd
Superconducting Technology Assessment - nitrd
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For system-in-stack purposes, it was necessary to develop a technique to be able to stack packaged components<br />
and/or bare die components. This technique creates uniform size layers with non-uniform die sizes in each layer by<br />
creating a frame around the die (or dice) using potting as shown in Figure 4. Process starts with a bumped KGD<br />
encapsulated in a potting compound. Thin film metal traces contact the I/O bumps and route the signals to the<br />
edges of the potting material. The layer is ground from the backside resulting in a thin (100-250 micron) complete<br />
layer. The stack is created by laminating many layers with a cap substrate, which uses through-holes to provide I/O<br />
paths. Metalization is applied on one or more sides to interconnect layers and the cap substrate.<br />
System-in-stacks with heterogeneous mix of components and the needed discretes for the high-speed operation<br />
of the stack can be realized. Multi-layer traces can be used to support complex interconnect structures needed for<br />
multi-chip layers and for high-speed operation up to 30 GHz. Heat management layers (such as copper, diamond,<br />
etc.) can be added on top of active components. These layers have dual functions:<br />
■ Providing a low-resistance, direct path for efficient thermal flow to the edge of the stack<br />
to keep the maximum temperature in the stack under control.<br />
■ Serving as shims to maintain the total layer-to-layer tolerances of the stack for high-density<br />
edge interconnect structures.<br />
The manufacturability is maintained by allowing loose tolerances in the layer formation (component height variations,<br />
substrate thickness variations). Heterogeneous 3D chip stacking is a versatile technology allowing stacking of<br />
non-electronic components. Waveguides, vertical cavity surface emitting lasers, detectors are among devices used<br />
in stack layers. The free surfaces of the stacks are especially suitable for these types of devices. Optical interconnects<br />
from stack to stack and integrated focal plane arrays were already demonstrated 4 . <strong>Superconducting</strong> electronic<br />
circuits based on NbN and Nb Josephson junctions were inserted in stack layers and operated at temperatures as<br />
low as 4 K indicating the flexibility and reliability of the material system used in 3D chip stacks (Figure 5). Stacked<br />
systems were operated at 20 GHz. There are proposed approaches to integrate MEMS devices and passive optical<br />
components in stacks.<br />
When the material selection and system design is judiciously performed, chip stacks have been shown to operate<br />
reliably with MTTF exceeding 10 years, in a wide temperature range (from – 270 C to 165 C) and in hostile<br />
environments subjected to 20,000 G. 3D packaging provides an excellent alternative to satisfy the needs high<br />
functionality system and sub-system integration applications, yielding system architectures that cannot be<br />
realized otherwise.<br />
Thermal management is a key issue when aggressive miniaturization is used to pack large electronic functionalities<br />
into small volumes. When the power budget increases, thermal management layers can be inserted in the stack as<br />
alternating layers in addition to active layers. Experimental and analytical results indicated that up to 80W can be<br />
dissipated in a stack volume of 1cm 3 . Thermal resistance within the stack can be as low as 0.1 C/W. Minimal<br />
thermal resistance is critical for superconducting electronic applications where the components need to operate at 4 K.<br />
Other trade-offs associated with 3D packaging are:<br />
■ Cost.<br />
■ Test.<br />
■ Reparability.<br />
4 V. Ozguz, P. Marchand, Y. Liu, Proc. International Conference on High Density Interconnect and System Packaging, (2000), p. 8<br />
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