13.12.2012 Views

Etude de capacités en couches minces à base d'oxydes métalliques ...

Etude de capacités en couches minces à base d'oxydes métalliques ...

Etude de capacités en couches minces à base d'oxydes métalliques ...

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

tel-00141132, version 1 - 11 Apr 2007<br />

Chapitre 1 : Problématique<br />

Bibliographie<br />

[1] G. Moore, Cramming more compon<strong>en</strong>ts onto integrated circuits, Electronics, 1965, vol<br />

38.<br />

[2] A.I. Kingon, J.-P. Maria, S.K. Streiffer, Alternative dielectrics to silicon dioxi<strong>de</strong> for<br />

memory and logic <strong>de</strong>vices, Nature, 2000, vol 406, p1032-1038.<br />

[3] http://public.itrs.net/ pour les <strong>de</strong>rnières mises <strong>à</strong> jour.<br />

[4] M.L. Gre<strong>en</strong>, T.W. Sorsch, G.L. Timp, D.A. Muller, B.E. Weir, P.J. Silverman, S.V.<br />

Moccio, Y.O. Kim, Un<strong>de</strong>rstanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for<br />

sub-50 nm CMOS, Microelectronic Engineering, 1999, vol 48, p25-30.<br />

[5] M. Depas, B. Vermeire, P. W. Mert<strong>en</strong>s, R. L. Van Meirhaeghe, M. M. Heyns,<br />

Determination of tunnelling parameters in ultra-thin oxi<strong>de</strong> layer poly-Si/SiO2/Si structures,<br />

Solid-State Electronics, 1995, vol38, p1465-1471.<br />

[6] R.K. Ulrich, W.D. Brown, S.S. Ang, F.D. Barlow, A. Elshabini, T.G. L<strong>en</strong>ihan, H.A.<br />

Naseem, D.M. Nelms, J. Parkerson, L.W. Schaper, G. Morcan, Getting aggressive with<br />

passive <strong>de</strong>vices, IEEE Circuits and Devices Magazine, 2000, vol 16, n°5, p16-25.<br />

[7] R. Ulrich, L. Schaper, Putting passives in their place, IEEE spectrum, 2003, p26-30.<br />

[8] http://www.mimosa-fp6.com<br />

[9] C. Kittel, Physique <strong>de</strong> l’état soli<strong>de</strong>, 7 ème édition, 1998, Ed. Dunod, Paris.<br />

[10] D. Roy, S.B. Krupanidhi, Pulsed excimer laser ablated barium titanate thin films,<br />

Applied Physics Letters, 1992, vol61, n°17, p2057-2059.<br />

[11] C. Durand, C. Vallée, V. Loup, O. Salicio, C. Dubourdieu, S. Blonkowski, M. Bonvalot,<br />

P. Holliger, O. Joubert, Metal-insulator-metal capacitors using Y2O3 dielectric grown by<br />

pulsed-injection plasma <strong>en</strong>hanced metalorganic chemical vapor <strong>de</strong>position, Journal of<br />

Vacuum Sci<strong>en</strong>ce and Technology A, 2004, vol 22, n°3, p655-660.<br />

[12] M. Ohring, The Materials Sci<strong>en</strong>ce of Thin Films, 1992, Ed. Aca<strong>de</strong>mic Press.<br />

[13] J. McPherson, J.Y. Kim, A. Shanware, H. Mogul, Thermochemical <strong>de</strong>scription of<br />

dielectric breakdown in high dielectric constant materials, Applied Physics Letters, 2003,<br />

vol 82, n°13, p2121-2123.<br />

[14] R.M. Wallace, G.D. Wilk, I<strong>de</strong>ntifying the most promising high-k gate dielectrics,<br />

Semiconductor International, juil. 2001, p227-236.<br />

[15] B.T. Lee, C.S. Hwang, Influ<strong>en</strong>ces of interfacial intrinsic low-dielectric layers on the<br />

dielectric properties of sputtered (Ba,Sr)TiO3 thin films, Applied Physics letters, 2000, vol<br />

77, n°1, p124-126.<br />

35

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!