Numerische Berechnung der elektronischen ... - SAM - ETH Zürich
Numerische Berechnung der elektronischen ... - SAM - ETH Zürich
Numerische Berechnung der elektronischen ... - SAM - ETH Zürich
Erfolgreiche ePaper selbst erstellen
Machen Sie aus Ihren PDF Publikationen ein blätterbares Flipbook mit unserer einzigartigen Google optimierten e-Paper Software.
128 LITERATURVERZEICHNIS<br />
[47] D. M. Wood and A. Zunger, Successes and failures of the k·p method: A direct<br />
assessment for GaAs/AlAs quantum structures, Physical Review B 53 (1996),<br />
7949–7963.<br />
[48] S. Adachi, GaAs, AlAs, and Al x Ga 1−x As: Material parameter for use in<br />
research and device applications, Journal of Applied Physics 58 (1985), R1–<br />
R28.<br />
[49] (M. Levinshtein, S. Rumyantsev, and M. Shur, eds.), Ternary and Quaternary<br />
III-IV-Compounds, Vol. 2 of Handbook series on semiconductor parameters,<br />
World Scientific Publishing Co. Pte. Ltd., Singapore, 1999.<br />
[50] N. P. Belov, V. T. Prokopenko, and A. D. Yas’kov, Parameters of the k·p<br />
method calculated for semiconductors by nonlocal empirical pseudopotential<br />
method, Sov. Phys. Semicond. 23 (1989), 1296–1297.<br />
[51] D. F. Nelson, R. C. Miller, C. W. Tu, and S. K. Sputz, Exciton binding<br />
energies from an envelope-function analysis of data on narrow quantum wells<br />
of integral monolayer widths in Al 0.4 Ga 0.6 As/GaAs, Physical Review B 36<br />
(1987), 8063–8070.<br />
[52] G.Bastard, Superlattice band structure in the envelope-function approximation,<br />
Physical Review B 24 (1981), 5693–5697.<br />
[53] G. Bastard, Theoretical investigations of superlattice band structure in the<br />
envelope-function approximation, Physical Review B 25 (1982), 7584–7597.<br />
[54] S. R. White and L. J. Sham, Electronic properties of flat-band semiconductor<br />
heterostructures, Physical Review Letters 47 (1981), 879–882.<br />
[55] Áèð Ã.Ë. è Ïèêóñ Ã.Å. (G. L. Bir and G. E. Pikus), Òåîðèÿ äåôîðìàöèîííîãî<br />
ïîòåíöèàëà äëÿ ïîëóïðîâîäíèêîâ ñî ñëîæíîé çîííîé ñòðóêòóðîé (theory<br />
of deformation potential for semiconductors with compounds structures),<br />
Ôèçèêà Òâåðäîãî Òåëà (Soviet Solid State Physics) 11 (1960), 22872300.<br />
[56] G. Bastard, Wave mechanics applied to semiconductor heterostructures, Halsted<br />
Press, Les Ulis, 1988.<br />
[57] D. J. BenDaniel and C. B. Duke, Space-charge eects on electron tunneling,<br />
Physical Review 152 (1966), 683692.<br />
[58] M. F. H. Schuurmans and G. W. 't Hooft, Simple calculations of connement<br />
states in a quantum well, Physical Review B 31 (1985), 80418048.<br />
[59] B. Chen, M. Lazzouni, and L. R. Ram-Mohan, Diagonal representation for<br />
the transfer-matrix method for obtaining electronic energy levels in layered<br />
semiconductor heterostructures, Physical Review B 45 (1992), 12041212.<br />
[60] M. Altarelli, Electronic structure and semiconductor-semimetal transition in<br />
InAs-GaSb superlattices, Physical Review B 28 (1983), 842845.<br />
[61] M. G. Burt, An exact formulation of the envelope function method for the<br />
determination of electronic states in semiconductor microstructures, Semiconductor<br />
Science and Technology 2 (1987), 460462.<br />
[62] M. G. Burt, An exact formulation of the envelope function method for the<br />
determination of electronic states in semiconductor microstructures, Semiconductor<br />
Science and Technology 3 (1988), 739753.