Xilinx Reliability Monitor Report - Quarter 4 CY 2001

Combined Lots:
Failures:
Device on test:
Actual device hours:
Average Test Time :
Equiv. device hrs @ Tj=125C:
Equiv. device hrs @ Tj=55C:
Equiv. device hrs @ Tj=25C:
Jan. 1, 2002
P.45
Reliability Testing Summary
High Temperature Life Test
Qualification
Technology:
Device Type:
Package Type:
Actual Junction Temperature:
Assumed Activation Energy:
Confidence Level:
0.15 um Si Gate CMOS
XC2VXXX
FG256, BF957, FF1152
150C (dynamic) ; 125C (static)
0.70 ev
60%
XC2V1000 XC2V3000 XC2V6000 XC2VXXXX
Static Dynamic Dynamic
3
0
111
114,613
1,033
114,613
8,919,517
1.08E+08
4
0
96
99,162
1,023
327,834
25,513,017
3.08E+08
1
0
10
10,100
1,010
33,731
2,625,063
3.17E+07
13
0
405
411,624
1,016
1,017,639
79,195,628
9.58E+08
Failure Rate(60% C.L.) in FITS @ Tj=55C: 12
Failure Rate(60% C.L.) in FITS @ Tj=25C: 1
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