Xilinx Reliability Monitor Report - Quarter 4 CY 2001

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Jan. 1, 2002 P. 8 2.5 Reliability Monitor (cont’d) 2.5.2 Package/ Assembly (Monitor) Reliability Test Condition Duration Temperature Humidity Bias (THB) or High Accelerated stress Test (HAST) Temperature Cycling (TC) B Lot Qty SS/ site /pkg family/quarter 85°C, 85% R.H., V DD 1,000 hours 1 45 0 fail 130°C, 85% R.H., VDD -65°C/+150°C , -55°C/+125°C, -40°C/+125°C or -0°C/+100°C 121°C, 100% R.H. or 100 hours 1 22 0 fail 500 cycles or 1,000 cycles 1 45 0 fail Autoclave or 96 hours 1 45 0 fail Moisture Resistance 85°C, 85% R.H., 1,000 hours Solderability 1 3 0 fail Mark Permanency 1 3 0 fail Lead Fatigue 1 3 0 fail Physical Dimension 1 5 0 fail Note: Acceptance A. The sample size listed is based on the die size
Jan. 1, 2002 4. Failure Analysis: At Xilinx analysis is performed on all Qualification stress test failures, with the appropriate failure mechanism identified. Each failure analysis is analyzed and categorized in accordance with the failure mechanism. (Table I) P. 9 3. Process Technology Family Process Technology Device 0.15 um XC2VXXX 0.18 /0.15 um XCVXXXEA 0.18 um XCVXXXE 0.22 / 0.18 um XC2SXXX, XCVXXXA 0.22 um XCVXXX 0.25 um XC4XXXXL/XLA, XCSXXXL 0.35 um XC17VXX (Eprom), XC18VXX (Flash) 0.35 um XC4XXXXL, XCSXX, XC95XXXL (Flash) 0.5 um XC4XXXE/EX, XC95XXX 0.6 um XC17XXX/L/E (Eprom), XC4XXX/L/E
Page 1 and 2: Jan. 1, 2002 P. 1 The Reliability D
Page 3 and 4: Jan. 1, 2002 P. 3 TABLE OF CONTENTS
Page 5 and 6: Jan. 1, 2002 P. 5 2.1 Wafer Process
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Package Details Motherboard Design
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Package Motherboard Jan. 1, 2002 P
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Package Motherboard Jan. 1, 2002 P
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Xilinx Reliability Monitor Report - Quarter 4 CY 2001

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