Bulletin 2009/07 - European Patent Office
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Bulletin 2009/07 - European Patent Office

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(H01J) I.1(1)<br />

(74) Brooks, Nigel Samuel, Hill Hampton East<br />

Meon, Petersfield Hampshire GU32 1QN, GB<br />

(51) H01J 65/04 (11) 2 022 <strong>07</strong>9 A2*<br />

(25) En (26) En<br />

(21) <strong>07</strong>735615.2 (22) 24.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) IB 20<strong>07</strong>/051490 24.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/125471 20<strong>07</strong>/45 08.11.20<strong>07</strong><br />

(30) 01.05.2006 EP 06113335<br />

(54) • NIEDERDRUCKENTLADUNGSLAMPE<br />

• LOW-PRESSURE DISCHARGE LAMP<br />

• LAMPE À DÉCHARGE BASSE PRESSION<br />

(71) Koninklijke Philips Electronics N.V., Groenewoudseweg<br />

1, 5621 BA Eindhoven, NL<br />

(72) ANTONIS, Piet, 5656 AA Eindhoven, NL<br />

SENSEN, Maurice J.S.E., 5656 AA Eindhoven,<br />

NL<br />

DE MAN, Rolf E., 5656 AA Eindhoven, NL<br />

VAN DIJK, Gerardus A.R., 5656 AA Eindhoven,<br />

NL<br />

(74) Bekkers, Joost J.J, Philips Intellectual Property<br />

& Standards P.O. Box 220, 5600 AE<br />

Eindhoven, NL<br />

H01J 65/04 → (51) H01J 65/00<br />

(51) H01L 21/00 (11) 2 022 080 A2*<br />

(25) En (26) En<br />

(21) <strong>07</strong>735616.0 (22) 24.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) IB 20<strong>07</strong>/051491 24.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/122585 20<strong>07</strong>/44 01.11.20<strong>07</strong><br />

(30) 26.04.2006 EP 06300405<br />

(54) • VERFAHREN ZUR HERSTELLUNG EINER<br />

HALBLEITERVORRICHTUNG, HALBLEI-<br />

TERVORRICHTUNG DARAUS UND AUF-<br />

SCHLÄMMUNG, DIE SICH FÜR EIN<br />

DERARTIGES VERFAHREN EIGNET<br />

• METHOD OF MANUFACTURING A SEMI-<br />

CONDUCTOR DEVICE, SEMICONDUCTOR<br />

DEVICE OBTAINED HEREWITH, AND<br />

SLURRY SUITABLE FOR USE IN SUCH A<br />

METHOD<br />

• PROCÉDÉ DE FABRICATION D'UN DISPO-<br />

SITIF SEMI-CONDUCTEUR, DISPOSITIF<br />

SEMI-CONDUCTEUR AINSI OBTENU, ET<br />

BOUE POUVANT ÊTRE UTILISÉE DANS UN<br />

TEL PROCÉDÉ<br />

(71) Koninklijke Philips Electronics N.V., Groenewoudseweg<br />

1, 5621 BA Eindhoven, NL<br />

(72) KORDIC, Srdjan, NL-5656 AG Eindhoven, NL<br />

(74) Röggla, Harald, NXP Semiconductors IP<br />

Department Gutheil-Schoder-Gasse 8-12,<br />

1100 Wien, AT<br />

H01L 21/00 → (51) H01L 21/762<br />

(51) H01L 21/02 (11) 2 022 081 A1*<br />

H01L 27/06 H01L 27/<strong>07</strong><br />

H01L 27/08<br />

(25) En (26) En<br />

(21) <strong>07</strong>727704.4 (22) 03.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) EP 20<strong>07</strong>/053233 03.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/134903 20<strong>07</strong>/48 29.11.20<strong>07</strong><br />

(30) 18.05.2006 US 436248<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(54) • HOCHDICHTER ON-CHIP-KONDENSATOR-<br />

ENTWURF MIT HOHER AUSBEUTE<br />

• HIGH YIELD HIGH DENSITY ON-CHIP<br />

CAPACITOR DESIGN<br />

• CONCEPTION DE CONDENSATEUR SUR<br />

PUCE À HAUTE DENSITÉ À FORT RENDE-<br />

MENT<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) KIM, Jonghae, Fishkill, New York 12524, US<br />

TRZCINSKI, Robert, Rhinebeck, New York<br />

12572, US<br />

PLOUCHART, Jean-Olivier, New York, New<br />

York 10128, US<br />

KIM, Moon, Ju, Wappingers Falls, New York<br />

12590, US<br />

(74) Williams, Julian David, IBM United Kingdom<br />

Limited Intellectual Property Law Hursley<br />

Park, Winchester Hampshire SO21 2JN, GB<br />

(51) H01L 21/02 (11) 2 022 082 A2*<br />

H01L 27/08 H01C 10/00<br />

H01L 27/10<br />

(25) En (26) En<br />

(21) <strong>07</strong>735545.1 (22) 19.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) IB 20<strong>07</strong>/051409 19.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/122561 20<strong>07</strong>/44 01.11.20<strong>07</strong><br />

(88) 10.01.2008<br />

(30) 21.04.2006 EP 06300393<br />

(54) • EINSTELLBARER WIDERSTAND ZUR<br />

VERWENDUNG IN EINER WIDERSTANDS-<br />

TEILERSCHALTUNG UND HERSTEL-<br />

LUNGSVERFAHREN<br />

• ADJUSTABLE RESISTOR FOR USE IN A<br />

RESISTIVE DIVIDER CIRCUIT AND<br />

METHOD FOR MANUFACTURING<br />

• CIRCUIT DIVISEUR RESISTIF<br />

(71) NXP B.V., IP Department Hich Tech Campus<br />

60, 5656 AG Eindhoven, NL<br />

(72) NEGOI, Andy C., 5656 AG Eindhoven, NL<br />

(74) Röggla, Harald, NXP Semiconductors IP<br />

Department Gutheil-Schoder-Gasse 8-12,<br />

1100 Wien, AT<br />

H01L 21/02 → (51) H01L 51/00<br />

H01L 21/04 → (51) H01L 31/<strong>07</strong>2<br />

(51) H01L 21/20 (11) 2 022 083 A2*<br />

(25) En (26) En<br />

(21) <strong>07</strong>777014.7 (22) 11.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/011464 11.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/145758 20<strong>07</strong>/51 21.12.20<strong>07</strong><br />

(88) <strong>07</strong>.02.2008<br />

(30) <strong>07</strong>.06.2006 US 811703 P<br />

28.09.2006 US 536463<br />

(54) • SELEKTIVE EPITAKTISCHE BILDUNG VON<br />

HALBLEITERSCHICHTEN<br />

• SELECTIVE EPITAXIAL FORMATION OF<br />

SEMICONDUCTOR FILMS<br />

• FORMATION DE COUCHES À SEMI-<br />

CONDUCTEUR PAR ÉPITAXIE SÉLECTIVE<br />

(71) ASM America, Inc., 3440 East University<br />

Drive, Phoenix, AZ 85034-7200, US<br />

(72) BAUER, Matthias, Phoenix, Arizona 85042,<br />

US<br />

WEEKS, Keith, Doran, Gilbert, Arizona<br />

85233, US<br />

186<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>07</strong>/<strong>2009</strong>) 11.02.<strong>2009</strong><br />

(74) Polypatent, Braunsberger Feld 29, 51429<br />

Bergisch Gladbach, DE<br />

H01L 21/265 → (51) H01L 21/762<br />

H01L 21/268 → (51) H01L 21/762<br />

(51) H01L 21/31 (11) 2 022 084 A2*<br />

C30B 23/00<br />

(25) En (26) En<br />

(21) <strong>07</strong>761753.8 (22) 02.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/068043 02.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/131040 20<strong>07</strong>/46 15.11.20<strong>07</strong><br />

(88) 10.01.2008<br />

(30) 05.05.2006 US 381970<br />

11.08.2006 US 464121<br />

(54) • VERFAHREN UND VORRICHTUNG ZUR<br />

LICHTANREGUNG VON CHEMISCHEN<br />

STOFFEN FÜR ATOMSCHICHTABSCHEI-<br />

DUNG EINES DIELEKTRISCHEN FILMS<br />

• METHOD AND APPARATUS FOR PHOTO-<br />

EXCITATION OF CHEMICALS FOR ATOMIC<br />

LAYER DEPOSITION OF DIELECTRIC FILM<br />

• PROCEDE ET APPAREIL POUR LA PHOTO-<br />

EXCITATION DE PRODUITS CHIMIQUES<br />

POUR UN DEPOT PAR COUCHE ATO-<br />

MIQUE D'UN FILM DIELECTRIQUE<br />

(71) Applied Materials, Inc., 3050 Bowers Avenue,<br />

Santa Clara, CA 95054, US<br />

(72) SINGH, Kaushal K., Santa Clara, CA 95051,<br />

US<br />

MAHAJANI, Maitreyee, Saratoga, CA 95<strong>07</strong>0,<br />

US<br />

GHANAYEM, Steve G, Los Altos, CA 94024,<br />

US<br />

YUDOVSKY, Joseph, Campbell, CA 95008,<br />

US<br />

MCDOUGALL, Brendan, Livermore, CA<br />

94550, US<br />

(74) Zimmermann & Partner, Isartorplatz 1,<br />

80331 München, DE<br />

H01L 21/324 → (51) H01L 21/762<br />

H01L 21/334 → (51) H01L 29/94<br />

H01L 21/336 → (51) H01L 21/8234<br />

(51) H01L 21/44 (11) 2 022 085 A1*<br />

C23F 1/00<br />

(25) En (26) En<br />

(21) <strong>07</strong>755161.2 (22) 10.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/008798 10.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/133356 20<strong>07</strong>/47 22.11.20<strong>07</strong><br />

(30) 01.05.2006 US 415922<br />

(54) • VERFAHREN ZUR BILDUNG SELBSTAUS-<br />

GERICHTETER METALLSILIZIDKONTAKTE<br />

• METHOD FOR FORMING SELF-ALIGNED<br />

METAL SILICIDE CONTACTS<br />

• PROCÉDÉ DE FORMATION DE CONTACTS<br />

EN SILICIURE MÉTALLIQUE AUTO-ALI-<br />

GNÉS<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) FANG, Sunfei, LaGrangeville, NY 12540, US<br />

KNARR, Randolph, F., Putnam Valley, NY<br />

10579, US<br />

KRISHNAN, Mahadevaiyer, Hopewell Junction,<br />

NY 12533, US

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