Bulletin 2009/07 - European Patent Office
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Bulletin 2009/07 - European Patent Office

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(H01L) I.1(1)<br />

LAVOIE, Christian, Ossining, NY 10562, US<br />

MO, Renee, T., Briarcliff Manor, NY 10510,<br />

US<br />

PRANATHARTHIHARAN, Balasubramanian,<br />

Elmsford, NY 10523, US<br />

STRANE, Jay, W., Wappingers Falls, NY<br />

12590, US<br />

(74) Williams, Julian David, IBM United Kingdom<br />

Limited Intellectual Property Law Hursley<br />

Park, Winchester Hampshire SO21 2JN, GB<br />

(51) H01L 21/673 (11) 2 022 086 A1*<br />

H01L 21/677 H01L 21/68<br />

(25) En (26) En<br />

(21) <strong>07</strong>748136.4 (22) 16.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) SE 20<strong>07</strong>/000472 16.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/136318 20<strong>07</strong>/48 29.11.20<strong>07</strong><br />

(30) 24.05.2006 SE 0601150<br />

(54) • VERFAHREN ZUR HERSTELLUNG VON<br />

FOTOVOLTAISCHEN ZELLEN UND MODU-<br />

LEN AUS SILIZIUMPLÄTTCHEN<br />

• METHOD FOR PRODUCING PHOTOVOL-<br />

TAIC CELLS AND MODULES FROM SILI-<br />

CON WAFERS<br />

• PROCÉDÉ DE PRODUCTION DE CELLULES<br />

ET MODULES PHOTOVOLTAÏQUES À<br />

PARTIR DE PLAQUETTES DE SILICIUM<br />

(71) Fajersson, Göran, Villa Bellis Brunnsparken<br />

2, 256 54 Ramlösa, SE<br />

(72) Fajersson, Göran, 256 54 Ramlösa, SE<br />

H01L 21/677 → (51) H01L 21/673<br />

H01L 21/68 → (51) H01L 21/673<br />

(51) H01L 21/76 (11) 2 022 087 A2*<br />

(25) En (26) En<br />

(21) <strong>07</strong>811964.1 (22) 30.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/<strong>07</strong>0000 30.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/140425 20<strong>07</strong>/49 06.12.20<strong>07</strong><br />

(88) 27.03.2008<br />

(30) 30.05.2006 US 803499 P<br />

29.05.20<strong>07</strong> US 754924<br />

(54) • PROZESSKAMMER FÜR DIELEKTRISCHE<br />

LÜCKENFÜLLUNG<br />

• PROCESS CHAMBER FOR DIELECTRIC<br />

GAPFILL<br />

• CHAMBRE DE DÉPÔT DESTINÉE À LA<br />

RÉPARTITION D'ESPACE DIÉLECTRIQUE<br />

(71) APPLIED MATERIALS, INC., P.O. Box 450A,<br />

Santa Clara, CA 95052, US<br />

(72) LUBOMIRSKY, Dmitry, Cupertino, California<br />

95014, US<br />

LIANG, Qiwei, Fremont, California 94536, US<br />

PARK, Soonam, Mountain View, California<br />

94040, US<br />

CHUC, Kien, N., San Jose, California 95130,<br />

US<br />

YIEH, Ellie, San Jose, California 95138, US<br />

(74) Zimmermann & Partner, Isartorplatz 1,<br />

80331 München, DE<br />

(51) H01L 21/762 (11) 2 022 088 A2*<br />

H01L 21/265 H01L 27/12<br />

B01D 59/48 H01J 37/08<br />

(25) En (26) En<br />

(21) <strong>07</strong>795412.1 (22) 24.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/012602 24.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/142910 20<strong>07</strong>/50 13.12.20<strong>07</strong><br />

(30) 31.05.2006 US 444741<br />

(54) • SOI-STRUKTUR-HERSTELLUNG MITHILFE<br />

EINER HOCHREINEN ION-DUSCHE<br />

• PRODUCING SOI STRUCTURE USING<br />

HIGH-PURITY ION SHOWER<br />

• FABRICATION DB UNE STRUCTURE SOI À<br />

l AIDE D UNE GERBE D IONS DE HAUTE<br />

PURETÉ<br />

(71) Corning Incorporated, 1 Riverfront Plaza,<br />

Corning NY 14831, US<br />

(72) CITES, Jeffrey, S., Horseheads, New York<br />

14845, US<br />

GADKAREE, Kishor, P., Big Flats, New York<br />

14814, US<br />

MASCHMEYER, Richard, O., Corning, New<br />

York 14830, US<br />

(74) Boon, Graham Anthony, Elkington and Fife<br />

LLP, Prospect House, 8 Pembroke Road,<br />

Sevenoaks, Kent TN13 1XR, GB<br />

(51) H01L 21/762 (11) 2 022 089 A2*<br />

H01L 21/268 B23K 26/00<br />

H01L 21/324 H01L 21/00<br />

(25) En (26) En<br />

(21) <strong>07</strong>795413.9 (22) 24.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/012603 24.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/142911 20<strong>07</strong>/50 13.12.20<strong>07</strong><br />

(88) 10.04.2008<br />

(30) 31.05.2006 US 809881 P<br />

21.03.20<strong>07</strong> US 726290<br />

(54) • HALBLEITER AUF EINER ISOLIERSTRUK-<br />

TUR, DIE DURCH STRAHLGLÜHEN HER-<br />

GESTELLT WURDE<br />

• SEMICONDUCTOR ON INSULATOR<br />

STRUCTURE MADE USING RADIATION<br />

ANNEALING<br />

• STRUCTURE SEMI-CONDUCTEUR SUR<br />

ISOLANT RÉALISÉE AU MOYEN DE<br />

RECUIT PAR RAYONNEMENT<br />

(71) Corning Incorporated, 1 Riverfront Plaza,<br />

Corning NY 14831, US<br />

(72) COUILLARD, James, G., Ithaca, New York<br />

14850, US<br />

LEHUEDE, Philippe, F-91330 Yerres, FR<br />

VALLON, Sophie, A., F-91220 Bretigny sur<br />

Orge, FR<br />

(74) Boon, Graham Anthony, Elkington and Fife<br />

LLP, Prospect House, 8 Pembroke Road,<br />

Sevenoaks, Kent TN13 1XR, GB<br />

H01L 21/762 → (51) H01L 31/00<br />

(51) H01L 21/768 (11) 2 022 090 A1*<br />

H01L 27/12<br />

(25) En (26) En<br />

(21) <strong>07</strong>728532.8 (22) 25.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) EP 20<strong>07</strong>/054<strong>07</strong>7 25.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/131867 20<strong>07</strong>/47 22.11.20<strong>07</strong><br />

(30) 16.05.2006 US 383563<br />

(54) • IC-CHIPS MIT DOPPELVERDRAHTUNG<br />

• DUAL WIRED INTEGRATED CIRCUIT<br />

CHIPS<br />

• PUCES À CIRCUIT INTÉGRÉ À CÂBLAGE<br />

DUAL<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

187<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>07</strong>/<strong>2009</strong>) 11.02.<strong>2009</strong><br />

(72) JAFFE, Mark David, Shelburne, Vermont<br />

05482, US<br />

DALTON, Timothy Joseph, Ridgefield, Connecticut<br />

06877, US<br />

GAMBINO, Jeffrey Peter, Westford, Vermont<br />

05494, US<br />

KARTSCHOKE, Paul David, Williston, Vermont<br />

05495, US<br />

STAMPER, Anthony Kendall, Williston, Vermont<br />

05495, US<br />

BERNSTEIN, Kerry, Underhill, Vermont<br />

05489, US<br />

(74) Ling, Christopher John, IBM United Kingdom<br />

Limited Intellectual Property Law Hursley<br />

Park, Winchester Hampshire SO21 2JN, GB<br />

(51) H01L 21/8234 (11) 2 022 091 A1*<br />

H01L 21/336<br />

(25) En (26) En<br />

(21) <strong>07</strong>783126.1 (22) 02.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 20<strong>07</strong>/068056 02.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/131051 20<strong>07</strong>/46 15.11.20<strong>07</strong><br />

(30) 05.05.2006 US 381960<br />

(54) • VERFAHREN ZUR HERSTELLUNG EINES<br />

GATE-DIELEKTRIKUMS EINES FELDEF-<br />

FEKTTRANSISTORS<br />

• METHOD FOR FABRICATING A GATE<br />

DIELECTRIC OF A FIELD EFFECT TRAN-<br />

SISTOR<br />

• PROCEDE DE FABRICATION DIELEC-<br />

TRIQUE DE GRILLE POUR TRANSISTOR A<br />

EFFET DE CHAMP<br />

(71) Applied Materials, Inc., 3050 Bowers Avenue,<br />

Santa Clara, CA 95054, US<br />

(72) CHUA, Thai Cheng, Cupertino, CA 95014, US<br />

CZARNIK, Cory, Saratoga, CA 95<strong>07</strong>0, US<br />

HEGEDUS, Andreas G., Menlo Park, CA<br />

94025, US<br />

OLSEN, Christopher Sean, Fremont, CA<br />

95363, US<br />

AHMED, Khaled Z., Anaheim, CA 92804, US<br />

KRAUS, Philip Allan, San Jose, CA 95123,<br />

US<br />

(74) Zimmermann & Partner, Postfach 330 920,<br />

80069 München, DE<br />

H01L 21/84 → (51) H01L 31/00<br />

H01L 23/00 → (51) G02B 6/42<br />

H01L 23/36 → (51) F21L 14/00<br />

H01L 23/473 → (51) H05K 7/20<br />

H01L 23/50 → (51) G02B 6/42<br />

H01L 23/522 → (51) H01L 27/06<br />

H01L 25/00 → (51) G01T 1/24<br />

H01L 27/00 → (51) G01T 1/24<br />

(51) H01L 27/06 (11) 2 022 092 A1*<br />

H01L 27/08 H01L 23/522<br />

(25) En (26) En<br />

(21) <strong>07</strong>727706.9 (22) 03.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) EP 20<strong>07</strong>/053235 03.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/134904 20<strong>07</strong>/48 29.11.20<strong>07</strong><br />

(30) 18.05.2006 US 436249

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