Bulletin 2009/07 - European Patent Office
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(H01L) I.1(2)<br />

(74) Mak, Andras, S.B.G. & K. <strong>Patent</strong> and Law<br />

<strong>Office</strong>s Andrassy ut 113., 1062 Budapest, HU<br />

H01L 21/00 → (51) G06K 19/<strong>07</strong>7<br />

H01L 21/00 → (51) H01L 21/18<br />

(51) H01L 21/02 (11) 2 023 375 A1<br />

H01L 21/3065 H01L 21/762<br />

H01L 27/12<br />

(25) Ja (26) En<br />

(21) <strong>07</strong>743299.5 (22) 14.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) JP 20<strong>07</strong>/059864 14.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/138848 20<strong>07</strong>/49 06.12.20<strong>07</strong><br />

(30) 29.05.2006 JP 2006147915<br />

(54) • VERFAHREN ZUR HERSTELLUNG EINES<br />

GEBONDETEN WAFERS<br />

• BONDED WAFER MANUFACTURING<br />

METHOD<br />

• PROCEDE DE FABRICATION DE PLA-<br />

QUETTES LIEES<br />

(71) Shin-Etsu Handotai Co., Ltd., 6-2, Ohtemachi<br />

2-chome Chiyoda-ku, Tokyo 100-0004, JP<br />

(72) SOETA, Yasutsugu, Annaka-shi, Gunma 379-<br />

0125, JP<br />

NOTO, Nobuhiko, Annaka-shi, Gunma 379-<br />

0125, JP<br />

(74) Wibbelmann, Jobst, Wuesthoff & Wuesthoff<br />

<strong>Patent</strong>- und Rechtsanwälte Schweigerstrasse<br />

2, 81541 München, DE<br />

(51) H01L 21/02 (11) 2 023 376 A2<br />

H01L 21/302 H01L 21/3065<br />

H01L 21/8234 H01L 21/205<br />

H01L 21/20<br />

(25) En (26) En<br />

(21) 08169059.6 (22) 27.01.2006<br />

(84) DE<br />

(30) 31.01.2005 US 47323<br />

03.10.2005 US 242613<br />

(54) • Ätzende Behandlungsverfahren für Substratoberflächen<br />

und Kammeroberflächen<br />

• Etchant treatment processes for substrate<br />

surfaces and chamber surfaces<br />

• Procédés de traitement par un agent<br />

d'attaque chimique pour surfaces de<br />

substrat et de chambre<br />

(71) Applied Materials, Inc., 3050 Bowers Avenue,<br />

Santa Clara, CA 95054, US<br />

(72) Samoilov, Arkadii V., Sunnyvale, CA 94087,<br />

US<br />

Zojaji, Ali, Santa Clara, CA 95051, US<br />

(74) Zimmermann & Partner, Isartorplatz 1,<br />

80331 München, DE<br />

(62) 06719625.3 / 1 848 550<br />

(51) H01L 21/02 (11) 2 023 377 A2<br />

H01L 21/302 H01L 21/3065<br />

H01L 21/8234 H01L 21/205<br />

H01L 21/20<br />

(25) En (26) En<br />

(21) 08169060.4 (22) 27.01.2006<br />

(84) DE<br />

(30) 31.01.2005 US 47323<br />

03.10.2005 US 242613<br />

(54) • Ätzende Behandlungsverfahren für Substratoberflächen<br />

und Kammeroberflächen<br />

• Etchant treatment processes for substrate<br />

surfaces and chamber surfaces<br />

• Procédés de traitement par un agent<br />

d'attaque chimique pour surfaces de<br />

substrat et de chambre<br />

(71) Applied Materials, Inc., 3050 Bowers Avenue,<br />

Santa Clara, CA 95054, US<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(72) Samoilov, Arkadii V., Sunnyvale, CA 94087,<br />

US<br />

Zojaji, Ali, Santa Clara, CA 95051, US<br />

(74) Zimmermann & Partner, Isartorplatz 1,<br />

80331 München, DE<br />

(62) 06719625.3 / 1 848 550<br />

(51) H01L 21/027 (11) 2 023 378 A1<br />

G03F 7/20<br />

(25) Ja (26) En<br />

(21) <strong>07</strong>743109.6 (22) 10.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) JP 20<strong>07</strong>/059674 10.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/129753 20<strong>07</strong>/46 15.11.20<strong>07</strong><br />

(30) 10.05.2006 JP 2006131280<br />

(54) • BELICHTUNGSVORRICHTUNG UND<br />

BAUELEMENTEHERSTELLUNGSVERFAH-<br />

REN<br />

• EXPOSURE APPARATUS AND DEVICE<br />

MANUFACTURING METHOD<br />

• APPAREIL D'EXPOSITION ET PROCÉDÉ<br />

DE FABRICATION DU DISPOSITIF<br />

(71) Nikon Corporation, 2-3, Marunouchi 3chome,<br />

Chiyoda-ku, Tokyo 100-8331, JP<br />

(72) NISHII, Yasufumi c/o NIKON CORPORATION,<br />

Chiyoda-ku, Tokyo 100-8331, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

(51) H01L 21/027 (11) 2 023 379 A1<br />

G03F 7/20<br />

(25) Ja (26) En<br />

(21) <strong>07</strong>743152.6 (22) 11.05.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) JP 20<strong>07</strong>/059717 11.05.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/138834 20<strong>07</strong>/49 06.12.20<strong>07</strong><br />

(30) 31.05.2006 JP 2006151208<br />

(54) • BELICHTUNGSVORRICHTUNG UND<br />

BELICHTUNGSVERFAHREN<br />

• EXPOSURE APPARATUS AND EXPOSURE<br />

METHOD<br />

• APPAREIL D'EXPOSITION ET PROCÉDÉ<br />

D'EXPOSITION<br />

(71) Nikon Corporation, 2-3, Marunouchi 3chome,<br />

Chiyoda-ku, Tokyo 100-8331, JP<br />

(72) OKITA, Shinichi, Tokyo 100-8331, JP<br />

(74) Hooiveld, Arjen Jan Winfried, Arnold &<br />

Siedsma Sweelinckplein 1, 2517 GK Den<br />

Haag, NL<br />

(51) H01L 21/18 (11) 2 023 380 A1<br />

H01L 21/762 H01L 21/00<br />

(25) Fr (26) Fr<br />

(21) 08160680.8 (22) 18.<strong>07</strong>.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

AL BA MK RS<br />

(30) 08.08.20<strong>07</strong> FR <strong>07</strong>56997<br />

(54) • Verfahren und Vorrichtung zum Durchbrechen<br />

eines Verbundssubstrats mittels<br />

einer brüchigen Trennebene<br />

• Method and installation for fracturing a<br />

composite substrate via an embrittlement<br />

plane<br />

• Procédé et installation pour la fracture d'un<br />

substrat composite selon un plan de<br />

fragilisation<br />

(71) S.O.I. TEC Silicon on Insulator Technologies,<br />

Parc Technologique des Fontaines Chemin<br />

des Franques, 38190 Bernin, FR<br />

345<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>07</strong>/<strong>2009</strong>) 11.02.<strong>2009</strong><br />

(72) Legros, David, 38190, FROGES, FR<br />

(74) Boura, Olivier, et al, Cabinet Beau de<br />

Loménie 158, rue de l'Université, 75340<br />

Paris Cedex <strong>07</strong>, FR<br />

H01L 21/20 → (51) H01L 21/02<br />

(51) H01L 21/205 (11) 2 023 381 A1<br />

C23C 16/27 C23C 16/511<br />

C30B 29/04<br />

(25) Ja (26) En<br />

(21) <strong>07</strong>742189.9 (22) 23.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) JP 20<strong>07</strong>/058754 23.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/132644 20<strong>07</strong>/47 22.11.20<strong>07</strong><br />

(30) 11.05.2006 JP 2006132145<br />

(54) • VERFAHREN ZUM SELEKTIVEN BILDEN<br />

EINER ATOMISCH FLACHEN EBENE AUF<br />

EINER DIAMANTOBERFLÄCHE, DURCH<br />

DAS VERFAHREN HERGESTELLTES DIA-<br />

MANTSUBSTRAT UND HALBLEITERELE-<br />

MENT DAMIT<br />

• METHOD OF SELECTIVELY FORMING<br />

ATOMICALLY FLAT PLANE ON DIAMOND<br />

SURFACE, DIAMOND SUBSTRATE PRO-<br />

DUCED BY THE METHOD, AND SEMI-<br />

CONDUCTOR ELEMENT EMPLOYING THE<br />

SAME<br />

• PROCEDE PERMETTANT DE FORMER<br />

SELECTIVEMENT UN PLAN PLAT DU<br />

POINT DE VUE ATOMIQUE SUR UNE<br />

SURFACE EN DIAMANT, SUBSTRAT DIA-<br />

MANT OBTENU A LA SUITE DE CE<br />

PROCEDE ET ELEMENT SEMI-CONDUC-<br />

TEUR L'EMPLOYANT<br />

(71) National Institute of Advanced Industrial<br />

Science and Technology, 3-1, Kasumigaseki<br />

1-chome Chiyoda-ku, Tokyo 100-8921, JP<br />

(72) TOKUDA, Norio, Tsukuba-shi Ibaraki 305-<br />

8568, JP<br />

UMEZAWA, Hitoshi, Tsukuba-shi Ibaraki<br />

305-8568, JP<br />

YAMASAKI, Satoshi, Tsukuba-shi Ibaraki<br />

305-8568, JP<br />

(74) Hall, Matthew Benjamin, Frank B. Dehn & Co.<br />

St Bride's House 10 Salisbury Square,<br />

London EC4Y 8JD, GB<br />

H01L 21/205 → (51) H01L 21/02<br />

H01L 21/285 → (51) C23C 16/44<br />

H01L 21/302 → (51) H01L 21/02<br />

(51) H01L 21/3065 (11) 2 023 382 A1<br />

C23C 14/06 H01L 21/308<br />

H01L 33/00<br />

(25) Ja (26) En<br />

(21) <strong>07</strong>742708.6 (22) 30.04.20<strong>07</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) JP 20<strong>07</strong>/059273 30.04.20<strong>07</strong><br />

(87) WO 20<strong>07</strong>/126091 20<strong>07</strong>/45 08.11.20<strong>07</strong><br />

(30) 01.05.2006 JP 2006128016<br />

01.05.2006 JP 2006128023<br />

(54) • ÄTZVERFAHREN, ÄTZMASKE UND VER-<br />

FAHREN ZUM HERSTELLEN EINES HALB-<br />

LEITERBAUELEMENTS DAMIT<br />

• ETCHING METHOD, ETCHING MASK AND<br />

METHOD FOR MANUFACTURING SEMI-<br />

CONDUCTOR DEVICE USING THE SAME

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