Etude de la fiabilité porteurs chauds et des performances des ...

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Thierry DI GILIO
[13] S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, “Design and cha-
racterization of the lightly doped drain-source (LDD) insulated gate field-effect transistor,”
IEEE Trans. Electron Devices, vol. ED-27, pp. 1359–1367, 1980. III.1.2
[14] P. J. Tsang, S. Ogura, W. W. Walker, J. F. Shepard, and D. L. Critchlow, “Fabrication of
high-performance LDDFET’s with oxide sidewall-spacer technology,” IEEE Trans. Elec-
tron Devices, vol. ED-29, pp. 590–596, 1982. III.1.2
[15] R. Degraeve, “Oxide reliability,” in IEEE International Reliability Physics Symposium,
Tutorial Notes, 1997, pp. Topic 7, pp. 7.1–7.71., 1997. III.1.3, III.1.3
[16] J. McPherson and H. Mogul, “Disturbed bonding states in SiO2 thin-films and their im-
pact on time-dependent dielectric breakdown,” in IEEE International Reliability Physics
Symposium Proc., pp. 47, 1998. III.1.3
[17] D. J. Dumin, S. Mopuri, S. Vanchinatan, R. Scott, R. Subramanian, and T. Lewis, “High
field emission related thin oxide wearout and breakdown,” in IEEE International Reliabi-
lity Physics Symposium, Tutorial Notes, pp. 143, 1994. III.1.3
[18] R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E.
Maes, “New insights in the relation between electron trap generation and the statistical
properties of oxide breakdown,” IEEE Trans. Electron Devices, vol. 45, no. 4, p. 904,
1998. III.1.3
[19] E. Rosenbaum, “Oxide reliability,” in IEEE International Reliability Physics Symposium,
Tutorial Notes, pp. Topic 6a, pp. 6a.1–6a.27, 1996. III.1.3
[20] D.Goguenheim, A.Bravaix, D. Vuillaume, F. Mondon, M. Jourdain, and A. Meinertzha-
gen, “Stress induced leakage currents in N-MOSFET’s submitted to channel hot-carrier
injections,” Journal of Non-Crystalline Solids, vol. 245, p. 1999, 41. III.1.3
[21] J. de Blauwe, J. Houdt, D. Wellekens, G. Groeseneken, and H. Maes, “SILC - related
effects in flash E2PROM’s - part i : A quantitative model for steady state SILC,” IEEE
Trans. Electron Devices, vol. 45, no. 8, p. 1745, 1998. III.1.3
[22] D. J. DiMaria and E. Cartier, “Mechanism for stress-induced leakage currents in thin sili-
con dioxide films,” J. Appl. Phys, vol. 78, pp. 3883–3894, 1995. III.1.3
[23] A. Bravaix, T. D. Gilio, and D. Goguenheim, “Worst-case of the hot-carrier degradation
between GO1-GO2 p-MOSFETs J203YB2 07A0 wafer,” Rapport Interne STMicroelec-
tronics, Juillet 2003. a )
[24] A. Bravaix, D. Goguenheim, N. Revil, and E. Vincent, “Hole injection enhanced hot-
carrier degradation in PMOSFETs used for System On Chip applications with 6.5-2nm
thick gate-oxide,” Microelectronic Reliability, vol. 44, no. 1, pp. 65–77, 2004. a ), a )
[25] A. Bravaix and D. Vuillaume, “analysis of the hot carrier degradation of deep-
174
submicrometer large -angle tilt implanted drain (LATID) MOSFETs,” Solid State Elec-
tronics, vol. 41, no. 9, pp. 1293–1302, 1997. a )