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tel-00117263, version 2 - 29 Jan 2007<br />

Chapitre IV<br />

FIG. IV.17 – Comparaison <strong>de</strong>s durées <strong>de</strong> vie exprimées en fonction <strong>de</strong> <strong>la</strong> tension <strong>de</strong> Drain <strong>de</strong>s<br />

transistors PMOS <strong>de</strong> <strong>la</strong> technologie T3 (Leff = 0.1 − 0.13. − 0.2µm) soumis au stress IB.<br />

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