Etude de la fiabilité porteurs chauds et des performances des ...

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Références du Chapitre IV
Chapitre IV
[1] T. C. Ong, P. K. Ko, and C. Hu, “Hot-carrier modeling and device degradation in surface-
channel p-MOSFET’s,” vol. 37, no. 7, pp. 1658–1666, 1990. IV.1, a ), b ), b ), IV.1.5
[2] B. S. Doyle, M. Bourcerie, J.-C. Marchetaux, and A. Boudoux, “Dynamic channel hot car-
rier degradation in MOS transistors by enhanced-hole injection into oxide,” IEEE Trans.
Electron Devices, vol. EDL-8, p. 237, 1987. IV.1
[3] E. Takeda and N. Suzuki, “An empirical model for device degradation due to hot carrier
injection,” IEEE Trans. Electron Devices, vol. EDL-4, no. 4, pp. 111–113, 1983. IV.1.1,
IV.1.1, IV.1.1, IV.1.1
[4] E. Takeda, H. Kume, T. Toyabe, and S. Asai, “Submicron MOSFET structures for mini-
mizing channel hot-electron injection,” IEEE Trans. Electron Devices, vol. EDL-29, pp.
612–618, 1982. IV.1.1
[5] S. Tam, P. K. Ko, and C. Hu, “Lucky electron model of hot electron injections in MOS-
FET’s,” IEEE Trans. Electron Devices, vol. ED-31, p. 1116, 1994. a ), a ), b )
[6] Y. A. E. Mansy and D. M. Caugheyd, “Modeling weak avalanche multiplication in IGFETs
and SOS transistor for CAD,” in IEDM ech Dig., 1975, p. 31, 1975. a )
[7] C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, “Hot-electron-
induced mosfet degradation - model, monitor, and improvement,” IEEE Trans. Electron
Devices, vol. ED-32, pp. 375–385, 1985. a ), a ), a ), a ), a ), b ), b ), b ), IV.1.5
[8] R. Bellens, P. Heremans, G. Groeseneken, and H. E. Maes, “On the channel-length de-
pendance of the hot-carrier degradation of n-channel MOSFET’s,” IEEE Electron Device
Lett., vol. 10, no. 12, pp. 553–555, 1989. a )
[9] B. Doyle, M. Bourcerie, J.-C. Marchetaux, and A. Boudou, “Interface state creation and
charge trapping in the medium-to-high gate voltage range (vd/2 ≤ vg ≤ vd) during hot-
carrier stressing of n-MOS transistors,” IEEE Trans. Electron Devices, vol. EDL-37, pp.
744–754, 1990. b )
[10] R. K. Mistry and B. S. Doyle, “Ac versus dc hot-carrier degradation in n-channel mos-
fet’s„” vol. 40, no. 1, pp. 66–104, 1993. b ), b ), IV.1.5
[11] J. J. Tzou, C. C. Yao, R. Cheung, and H. W. K. Chan, “Hot-carrier-induced degradation in
p-channel LDD MOSFET’s,” IEEE Electron Device Lett., vol. 7, p. 5, 1989. a ), a ), b ), b
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