Etude de la fiabilité porteurs chauds et des performances des ...

tel-00117263, version 2 - 29 Jan 2007
Références du Chapitre I
Chapitre I
[1] S. Sze, Physics of Semiconductor Devices, 2nd edition, 2nd ed. New-York: Wiley and
Sons, 1988. I.1.1, I.1.2, a )
[2] D. K. Schroder, “The concept of generation and recombinaison lifetime in semiconduc-
tors,” IEEE Trans. Electron Devices, pp. 1336–1338, Aout 1982. b )
[3] D. Vuillaume, D. Goguenheim, and G. Vincent, “New insights on the electronic properties
of trivalents silicon defects at oxidized 〈100〉 silicon surface,” Appl. Phys. Lett., no. 57, pp.
1206–1208, 1990. I.1.4
[4] D. Vuillaume, D. Goguenheim, and J. C. Bourgoin, “Nature of the defects generated by
electric field stress at the Si-SiO2 interface,” Appl. Phys. Lett., vol. 58, p. 490, 1991. I.1.4
[5] D. K. Shroder, Semiconductor material and device characterization. Wiley interscience,
John Wiley & Sons, Inc, 1990. I.1.4
[6] W. Shockley and W. Read, “Statistics of the recombinaison of holes and electrons,” Phys.
Rev., vol. 87, no. 5, pp. 62–69, 1952. a )
[7] G. Groeseneken, H. E. Maes, N. Beltran, and R. F. D. Keersmaecker, “A reliable approch
to charge-pumping measurements in MOS transistors,” IEEE Electron Device Lett., vol.
ED-31, no. 1, pp. 42–53, 1984. a ), II.2, c ), c ), c ), II.12, c )
[8] J. L. Autran, F. Djahli, B. Balland, C. Plossu, and L. Gaborieau, “Three-level charge pum-
ping on submicronic transistors,” IEEE Electron Device Lett., vol. 84, no. 6, pp. 607–611,
1992. a )
[9] N. S. Saks and M. G. Ancona, “Determination of interface trap capture cross sections
using three-level charge pumping,” IEEE Electron Device Lett., vol. 11, no. 8, Août 1990.
a )
[10] D. Goguenheim, D. Vuillaume, G. Vincent, and N. M. Johnson, “Accurate measurement
of capture cross section of semiconductor insulator interface sates by a trap-filling ex-
periment: the charge-potential feedback effect,” Journal of applied physic, no. 68(3), pp.
1104–1113, Août 1990. a )
[11] E. H. Snow, A. S. Grove, B. D. Deal, and C. T. Sah, “Ion transport phenomena in insulated
films,” Journal of Applied Physic, no. 36, pp. 1664–1673, Mai 1976. b )
57