~ National ~ Semiconductor - Al Kossow's Bitsavers

14.0 Preliminary Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (Vecl
-0.5Vt07.0V
DC Input Voltage (VIN) -0.5V to Vee + 0.5V
DC Output Voltage (VOUT) -0.5VtoVee + 0.5V
Storage Temperature Range (T 8TG) - 65·C to + 150"C
Power Dissipation (PO)
500mW
Lead Temp. (TL) (Soldering, 10 sec.) 260·C
ESO rating (RZAP = 1.5k, CZAP = 120 pF)
1600V
Preliminary DC Specifications TA = o·c to 70"C Vee = 5V ± 5%, unless otherwise specified.
Symbol Parameter Conditions Min Max Units
VOH Minimum High Level Output Voltage IOH = -20/LA Vee - 0.1 V
(Note 1, 4) IOH = -2.0mA 3.5 V
VOL Minimum Low Level Output Voltage IOl = 20/LA 0.1 V
(Note 1, 4) IOl = 2.0mA 0.4 V
VIH
VIH2
Vil
VIl2
Minimum High Level Input Voltage
(Note 2)
Minimum High Level Input Voltage
for RACK, WACK (Note 2)
Minimum Low Level Input Voltage
(Note 2)
Minimum Low Level Input Voltage
For RACK, WACK (Note 2)
2.0 V
2.7 V
0.8 V
0.6 V
liN Input Current VI = Vee or GNO -1.0 +1.0 /LA
loz Maximum TRI·STATE VOUT = Vee or GNO
Output Leakage Current
-10 +10 /LA
lee Average Supply Current TXCK = 10MHz
(Note 3)
RXCK = 10 MHz
BSCK = 20 MHz 40 mA
lOUT = O/LA
VIN = Vee or GNO
Note 1: These levels are tested dynamically using a IimHed amount of functional test patterns, please refer to Ae Test load.
Nota 2: Limited functional test pattems are performed at these Input levels. The majority of functional tests are performed at levels of 0 and 3 volts.
Note 3: This is measured with a O. t ".F bypass capaCitor between Vee and GND.
Note 4: The low drive CMOS compatible VOH and VOL limits are not tested directly. Detailed device characterization validates that this specification can be
guaranteed by testing the high drive TIL compatible VOL and VOH specHication.
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