Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

Contents
1 Introduction 1
1.1 Monolithic Integration of III-V Semiconductor on Silicon . . . . . 2
1.1.1 Status of Current Research and Challenges . . . . . . . . . 2
1.1.2 Thesis Approach . . . . . . . . . . . . . . . . . . . . . . . 4
1.2 Thesis Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Theoretical Background of Semiconductor Nanostructures 7
2.1 The Importance of Silicon . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Nanotechnology Approach to QDs Fabrication Methods . . . . . . 11
2.3 Low-Dimensional Semiconductor (Nanostrtuctures) . . . . . . . . 12
2.3.1 Density of States Function of Low-Dimensional Systems . . 14
2.3.2 Carriers Connement in Semiconductor Nanostructures . . 16
2.3.3 The Excitons Connement in Quantum Dots . . . . . . . 17
3 Heteroepitaxial Growth of III-V Semiconductor on Silicon Substrates
21
3.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2 The Concept of Epitaxy . . . . . . . . . . . . . . . . . . . . . . . 22
3.2.1 Fundamental Processes During Epitaxy . . . . . . . . . . . 22
3.2.2 Basics Physical Processes in MBE . . . . . . . . . . . . . . 24
3.3 Epitaxial Growth of Lattice-Mismatched Layers . . . . . . . . . . 30
3.4 Challenges of Heteroepitaxial Growth of III-V on Silicon . . . . . 30
3.4.1 Dierences in the Crystal Structure . . . . . . . . . . . . . 32
3.4.2 Large Lattice-Mismatch . . . . . . . . . . . . . . . . . . . 32
3.4.3 Large Thermal-Mismatch . . . . . . . . . . . . . . . . . . 39
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