Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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MBE Growth of Self-Assembled InAs and InGaAs Quantum Dots Embedded in Silicon Matrix Figure 5.8: (1 × 1 µm 2 ) AFM images of 2 MLs of InAs QDs grown using SK mode with dierent indium (In) growth rates (a) 108 nm/h (circular InAs QDs) and (b) 324 nm/h (dash-like QDs). The observed shape transition is due to the preferential migration of indium atoms along [110] crystal direction, resulted from the anisotropic migration lengths of indium atoms [85]. Fig. 5.9 shows the dependence of dierent growth parameters on their main structural properties such as density, lateral size, height of InAs QDs. From this study, one can conclude that the optimized growth parameters of InAs QDs can be identied morphology wise. The growth temperature should be set below 450 ◦ C, which is an essential condition for InAs QDs formation and can avoid any additional indium desorption, which is signicantly starts above this temperature [3]. A low growth rate of 108 nm/h resulted in circular QDs shape formation. However, average dots densities with non-overlapping dots can be achieved with a V/III ratio of 25 as well as with an InAs coverage less than 5 MLs. 74
5.4 Self-Assembled InAs QDs Embedded in Si Matrix Figure 5.9: Plot of dierent growth parameters versus the InAs QDs structural properties like lateral size, density, and height. (a) InAs coverage vs QDs density and QDs height, (b) InAs growth temperature vs QDs diameter and average height and (c) V/III ratio with QDs diameter and QDs density. 5.4 Self-Assembled InAs QDs Embedded in Si Matrix In this section, the study of self-assembled InAs QDs embedded in Si matrix will be presented in details. However, in the last section (Sec. 5.3.3) various growth parameters of InAs QDs grown on a Si buer layer were investigated to obtain controlled growth mechanism and optimized growth recipes. The use of the selforganized growth technique is highly desirable, because the lithography processes 75
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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viii
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Page 64 and 65: Experimental Growth and Characteriz
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Page 130 and 131: Optimization of MEE and MBE growth
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Optimization of MEE and MBE growth
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Optimization of MEE and MBE growth
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Conclusions substrates, respectivel
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REFERENCES [8] J. M. Gerard, O. Cab
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REFERENCES [29] http://www.wmi.badw
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REFERENCES [49] M. R. Brenner: GaP/
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REFERENCES [66] Y. Ishida, T. Takah
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REFERENCES [84] A. Garcia, C. M. Ma
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REFERENCES [100] M. Felici, P. Gall
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REFERENCES [116] H. Usui, H. Yasuda
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REFERENCES [133] Grassman, T. J. Br
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Conferences Contributions: Tariq Al
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Nomenclature
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REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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