Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Theoretical Background <strong>of</strong> Semiconductor Nanostructures<br />
Silicon transistors manufacturing technology has built on these advantages<br />
and advances <strong>of</strong> fabrication tools to the point where the state <strong>of</strong> art fabrication<br />
facilities can produce billions <strong>of</strong> transistors per wafer at the production rate <strong>of</strong><br />
thousands <strong>of</strong> wafer per day, like in the big microprocessor chip manufacturing<br />
industry. Considering these huge and intense amount <strong>of</strong> investment which has<br />
gone to Si transistor technology in the last decades and the domination <strong>of</strong> Si<br />
transistor in modern <strong>semiconductor</strong> devices and equipments. It is expected that<br />
Si will continue keep dominating the microelectronics industry for the foreseeable<br />
future [13].<br />
• Silicon Challenges :<br />
The recent advances <strong>of</strong> <strong>semiconductor</strong> technology with increasing transistor<br />
speed and density on Si wafers have started to expose some <strong>of</strong> the inherent limitations<br />
<strong>of</strong> traditional Si circuits and chips for ultra-high speed and high-density<br />
microelectronics applications (super chips) [13]. In particular, relatively low carrier<br />
mobility compared to other <strong>semiconductor</strong> compounds like GaAs and InP<br />
and the inability <strong>of</strong> Si crystals to form direct bandgap optoelectronic devices,<br />
have both begun to restrict the speed and the rates at which Si-based integrated<br />
circuits can operate. However, optical circuit interconnects oer an alternative<br />
model for high-speed microelectronics. In which individual circuits or devices on<br />
wafer chip are multiplexed by optical waveguides, providing crosstalk-free data<br />
paths with exponentially higher data rates than current metal wires [13, 11].<br />
The performance benets oered by optoelectronic integration on Si chips are in<br />
essence and in the same importance <strong>of</strong> those oered by optical ber technology<br />
that replaced much <strong>of</strong> traditional metal wiring in the telecommunications networks.<br />
Individual ber optic waveguides capable <strong>of</strong> carrying trillions <strong>of</strong> bits <strong>of</strong><br />
digital data per second through hundreds <strong>of</strong> discrete channels, now carry mostly<br />
all <strong>of</strong> the long-distance voice and data trac in the modern world [13]. Optoelectronic<br />
interconnects promise revolutionary speed and bandwidth development for<br />
Si integrated circuits if they can be successfully integrated in the current mature<br />
Si transistor microelectronics platform, these transistors and optical intercon-<br />
8