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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Theoretical Background <strong>of</strong> Semiconductor Nanostructures<br />

Silicon transistors manufacturing technology has built on these advantages<br />

and advances <strong>of</strong> fabrication tools to the point where the state <strong>of</strong> art fabrication<br />

facilities can produce billions <strong>of</strong> transistors per wafer at the production rate <strong>of</strong><br />

thousands <strong>of</strong> wafer per day, like in the big microprocessor chip manufacturing<br />

industry. Considering these huge and intense amount <strong>of</strong> investment which has<br />

gone to Si transistor technology in the last decades and the domination <strong>of</strong> Si<br />

transistor in modern <strong>semiconductor</strong> devices and equipments. It is expected that<br />

Si will continue keep dominating the microelectronics industry for the foreseeable<br />

future [13].<br />

• Silicon Challenges :<br />

The recent advances <strong>of</strong> <strong>semiconductor</strong> technology with increasing transistor<br />

speed and density on Si wafers have started to expose some <strong>of</strong> the inherent limitations<br />

<strong>of</strong> traditional Si circuits and chips for ultra-high speed and high-density<br />

microelectronics applications (super chips) [13]. In particular, relatively low carrier<br />

mobility compared to other <strong>semiconductor</strong> compounds like GaAs and InP<br />

and the inability <strong>of</strong> Si crystals to form direct bandgap optoelectronic devices,<br />

have both begun to restrict the speed and the rates at which Si-based integrated<br />

circuits can operate. However, optical circuit interconnects oer an alternative<br />

model for high-speed microelectronics. In which individual circuits or devices on<br />

wafer chip are multiplexed by optical waveguides, providing crosstalk-free data<br />

paths with exponentially higher data rates than current metal wires [13, 11].<br />

The performance benets oered by optoelectronic integration on Si chips are in<br />

essence and in the same importance <strong>of</strong> those oered by optical ber technology<br />

that replaced much <strong>of</strong> traditional metal wiring in the telecommunications networks.<br />

Individual ber optic waveguides capable <strong>of</strong> carrying trillions <strong>of</strong> bits <strong>of</strong><br />

digital data per second through hundreds <strong>of</strong> discrete channels, now carry mostly<br />

all <strong>of</strong> the long-distance voice and data trac in the modern world [13]. Optoelectronic<br />

interconnects promise revolutionary speed and bandwidth development for<br />

Si integrated circuits if they can be successfully integrated in the current mature<br />

Si transistor microelectronics platform, these transistors and optical intercon-<br />

8

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