Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Conclusions substrates, respectively. The post growth annealing together with Si capping resulted in a very interesting structure evolution and growth scenario through vacancy stacking faults (V-SF) and circular-voids formation. The circular-voids and V-SF kinetics shows strong dependence on the substrate temperature. During temperature ramping up to 800 ◦ C total recrystallization and reconstruction of the grown structure has been observed. The InAs vapor interact with Si walls and conned in the voids, evolved nally to a nearly spherical QD shape, which results in a defect-free Si matrix growth around the InAs QDs. GPA 2D strain mapping derived from high-resolution TEM structure images conrmed fully relaxed QDs with no detectable strain gradients in the Si matrix around InAs clusters. On the other hand, anisotropic lattice distortions inside the InAs clusters are identied, which are characterized by compressive and tensile strain distributions in the two mapped directions, i.e. parallel and perpendicular to the growth direction. This residual strain is discussed based on the thermal mismatch between InAs and Si. The lattice strain is released by dislocation loops localized along the InAs/Si interface consisting of perfect 60 ◦ -type dislocations, while the thermal stress is released by SFs generation during cool down process. Successful MBE growth of n-type (As 4 ) doped silicon with a controlled doping prole and doping levels up to 7×10 17 cm −3 as well as P-N junctions characteristics have been achieved. The site-controlled growth of GaAs/In 0.15 Ga 0.85 As/GaAs nanostructures has been demonstrated for the rst time with 1 µm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO 2 mask. The optimized GaP growth with best RMS values of 1.3 nm for the MBE-GaP growth was obtained without growth stop between GaP-MEE and GaP-MBE, and with the increased Ga growth rate from 100 nm to 300 nm during the temperature ramping from MEE to MBE growth mode. We can conclude that the thin GaP- MEE/Si shows great promise as a virtual substrate for III-V on Si growth. These results are highly encouraging for the realization and integration of III-V on Si optical devices for potential applications. 128
References [1] Z. M. Zhao, O. Hulko, T. S. Yoon, and Y. H. Xie: Initial stage of InAs growth on Si (001) studied by high-resolution transmission electron microscopy, Journal of Applied Physics 98, 123526 (2005) [2] L. Li, D. Guimard, M. Rajesh, and Y. Arakawa: Growth of InAs/Sb: GaAs quantum dots on silicon substrate with high density and ecient light emission in the 1.3 µm band, Applied Physics Letters 92, 263105 (2008) [3] L. Hansen, F. Bensing, and A. Waag: Growth and characterization of InAs quantum dots on silicon substrate, Thin Solid Films 367, P. 85-87 (2000) [4] G. E. Cirlin, N. K. Polyakov, V. N. Petrov, V. A. Egorov, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, R. Heitz, D. Bimberg, N. D. Zakharov, P. Werner, and U. Gösele: Heteroepitaxial growth of InAs on Si: The new type of quantum dots, Materials Physics and Mechanics 1, P. 15-19 (2000) [5] T. Al Zoubi, M. Usman, M. Benyoucef, and J. P. Reithmaier: Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization, Journal of Crystal Growth 323, P. 422 - 425 (2011) [6] M. Tachikawa, and H. Mori: Dislocation generation of GaAs on Si in the cooling stage, Applied Physics Letters 56, P. 2225-2227 (1990) [7] H. Kawanami: Heteroepitaxial technologies of III-V on Si, Solar Energy Materials and Solar Cells 66, P. 479 - 486 (2001) 129
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
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Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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