Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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REFERENCES symbol Descriptions γ f Film-vacuum surface tension γ s Substrate-vacuum surface tension γ sf Substrate-lm surface tension ξ Poisson ratio µ ∗ Chemical potential β Constant f Lattice mist a L Layer lattice constant a s Substrate lattice constant ɛ Starin ɛ t Tensile strain ɛ || In-plane strain III − V Group three and ve elements in periodic table δ Lattice relaxation h c Critical thickness G Shear modulus b Burger vector F L Line force mist F G Glide force S Parallel mist dislocation α L Layer thermal expansion coecient α s Substrate thermal expansion coecient T ◦ Initial temperature T Final temperature φ O-cut angle or contact angle µm Micrometer nm Nanometer w Terrace width L Length c Velocity of light T Temperature e Electron charge h Plank constant g E Energy state density E, E i , E f Energy states 150
Acknowledgements I would like to gratefully acknowledge all the people who made this work possible. During my PhD time at the University of Kassel, I interacted with many colleagues who contribute directly or indirectly to my thesis. I would like to thank all of them for their help and support. I would like to express my deep and sincere gratitude to my rst supervisor and the director of Institute of Nanotechnology and Analytics (INA) Prof. Dr. Johann Peter Reithmaier. His wide knowledge and his logical way of thinking have been of great value for me. His understanding, encouraging and personal guidance have provided a good basis for the present thesis and contributed to the success of my work, I believe it was really a productive time. I would also like to thank Prof. Dr. H. Hilmer for co-supervising my thesis and Prof. Dr. M. E. Garcia and Prof. Dr. A. Ehresmann for being in the defense committee. I would like to thank all the members of reading committee. Thank you tacking the time for reading my thesis and providing me many helpful comments and suggestions. I would like to acknowledge Dr. Mohamed Benyoucef for his supervision, continuous support, assistance, revision of the thesis and publications and all fruitful scientic discussions. For the useful communications with our project partner Paul Drude Institute (PDI) in the Monalisa project. Furthermore, I would like to thank Monalisa project partners. Discussion with you was always inspiring and helpful. Moreover, I would
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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viii
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 114 and 115: MBE Growth of Self-Assembled InAs a
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Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
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Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
Page 154 and 155: REFERENCES [100] M. Felici, P. Gall
Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
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