Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

MBE Growth of Self-Assembled InAs and InGaAs Quantum Dots Embedded in
Silicon Matrix
= 6 kV, growth temperature = 700 ◦ C for both samples and only the time for
each sample was varied.
Sample No. Sample 1 Sample 2
Growth parameter
Growth rate Thickness Growth rate Thickness
[nm/h] [nm] [nm/h] [nm]
Deposition controller
140 100 135 50
Prolometer 310 220 290 115
Table 5.1:
Calibration of electron beam evaporator (EBE) silicon cell using two different
samples.
Table 5.6 shows the calibration parameters of the grown samples. The average
tooling factor according to Eq. 5.6 was found equal to 225.
Figure 5.4: 115 nm silicon buer layer grown on n-type (100) silicon substrate 0 ◦ o
cut. (a) AFM image (1×1 µm 2 ) with RMS = 0.12 nm, and (b) HR-XRD measurement
with FWHM values before (red curve) and after Si buer growth (black curve).
The corresponding growth rate for I emission = 72 mA and V = 6 kV was
approximated to 300 nm/h or 5 nm/min. Fig. 5.4 shows the AFM image and
HR-XRD measurement of the sample with a 115 nm thick silicon buer layer.
The root mean square (RMS) value of the surface roughness of 0.12 nm conrms
70