Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Chapter 2<br />
Theoretical Background <strong>of</strong><br />
Semiconductor Nanostructures<br />
2.1 The Importance <strong>of</strong> Silicon<br />
Silicon (Si) is the main and key material in modern microelectronics technology<br />
and the major player element aecting today's electronics market. About 95<br />
percent <strong>of</strong> microelectronics markets being dominated with silicon based <strong>semiconductor</strong><br />
devices sold worldwide. Several advantages <strong>of</strong> silicon-like high thermal<br />
conductivity, high stiness and availability <strong>of</strong> a stable oxide, (silicon comprises<br />
about 26 percent <strong>of</strong> the earth's crust, which makes it second in abundance after<br />
oxygen), easy to process (a very well-established industrial infrastructure in<br />
silicon processing exists around the world) and a developed technology for preparation<br />
<strong>of</strong> cheap large-area dislocation-free substrates make this material advantageous<br />
for numerous applications in microelectronics technology. On the other<br />
hand, silicon possesses two <strong>of</strong> the most outstanding natural dielectrics, silicon<br />
dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 ), which are essential for device formation<br />
and transistor design. In particular, SiO 2 , which is the basis for CMOS<br />
devices, can be grown thermally on a silicon wafer, it is chemically very stable,<br />
and it can achieve a very high breakdown voltage. The interface defects <strong>of</strong> the<br />
thermally grown SiO 2 by reaction <strong>of</strong> oxygen with a silicon wafer are several orders<br />
<strong>of</strong> magnitude lower than those <strong>of</strong> any deposited lm [13].<br />
7