Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
REFERENCES<br />
[8] J. M. Gerard, O. Cabrol, and B. Sermage: InAs quantum boxes: Highly ecient<br />
radiative traps for light emitting devices on Si, Applied Physics Letters<br />
68, P. 3123-3125 (1996)<br />
[9] T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds: 1.3 µm InAs/GaAs quantumdot<br />
lasers monolithically grown on Si substrates, Optics express 19, P. 11381-<br />
11386 (2011)<br />
[10] H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington,<br />
and Y. Tang: Device and Integration Technology for Silicon Photonic<br />
Transmitters, IEEE Journal <strong>of</strong> Selected Topics in Quantum Electronics 17, P.<br />
671-688 (2011)<br />
[11] P. Yeh, A. E. T. Chiou, J. Hong: Optical interconnection using photorefractive<br />
dynamic holograms, Applied Optics 27, P. 2093-2096 (1989)<br />
[12] Z. Zhao, Z. Hao, K. Yadavalli, K. L. Wang, and A. P. Jacob: Optical properties<br />
<strong>of</strong> InAs quantum dots grown on patterned Si with a thin GaAs buer layer,<br />
Applied Physics Letters 92, 083111 (2008)<br />
[13] S. Anwar, M. Yasin, A. Raja, S. Qazi, and M. Ilyas (editors): Nanotechnology<br />
for Telecommunications, CRC Press Taylor & Francis Group, (2010)<br />
[14] M. E. Gronert: Monlithic Hetero<strong>epitaxial</strong> Integration <strong>of</strong> <strong>III</strong>-V <strong>semiconductor</strong><br />
Lasers, Dissertation, Massachusetts Institue <strong>of</strong> Technology (MIT), (2002)<br />
[15] B. Sapoval, C. Hermann, Ellipses Paris (editor): Physics <strong>of</strong> Semiconductor,<br />
Spriner-Verlag, (1988)<br />
[16] T. Mano, H. Fujioka , K. Ono , Y. Watanabe , M. Oshima: InAs nanocrystal<br />
<strong>growth</strong> on Si (100), Applied Surface Science 130-132, P. 760-764 (1998)<br />
[17] Z. M. Zhao , O. Hulko, H. J. Kim, J. Liu, T. Sugahari, B. Shi, Y. H. Xie:<br />
Growth and characterization <strong>of</strong> InAs quantum dots on Si (001) substrates, Journal<br />
<strong>of</strong> crystal <strong>growth</strong> 271, P. 450-455 (2004)<br />
130