Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Theoretical Background of Semiconductor Nanostructures Silicon transistors manufacturing technology has built on these advantages and advances of fabrication tools to the point where the state of art fabrication facilities can produce billions of transistors per wafer at the production rate of thousands of wafer per day, like in the big microprocessor chip manufacturing industry. Considering these huge and intense amount of investment which has gone to Si transistor technology in the last decades and the domination of Si transistor in modern semiconductor devices and equipments. It is expected that Si will continue keep dominating the microelectronics industry for the foreseeable future [13]. • Silicon Challenges : The recent advances of semiconductor technology with increasing transistor speed and density on Si wafers have started to expose some of the inherent limitations of traditional Si circuits and chips for ultra-high speed and high-density microelectronics applications (super chips) [13]. In particular, relatively low carrier mobility compared to other semiconductor compounds like GaAs and InP and the inability of Si crystals to form direct bandgap optoelectronic devices, have both begun to restrict the speed and the rates at which Si-based integrated circuits can operate. However, optical circuit interconnects oer an alternative model for high-speed microelectronics. In which individual circuits or devices on wafer chip are multiplexed by optical waveguides, providing crosstalk-free data paths with exponentially higher data rates than current metal wires [13, 11]. The performance benets oered by optoelectronic integration on Si chips are in essence and in the same importance of those oered by optical ber technology that replaced much of traditional metal wiring in the telecommunications networks. Individual ber optic waveguides capable of carrying trillions of bits of digital data per second through hundreds of discrete channels, now carry mostly all of the long-distance voice and data trac in the modern world [13]. Optoelectronic interconnects promise revolutionary speed and bandwidth development for Si integrated circuits if they can be successfully integrated in the current mature Si transistor microelectronics platform, these transistors and optical intercon- 8
2.1 The Importance of Silicon nects, constituting the so-called optoelectronic integrated circuits (OEIC) [14]. • Indirect Bandgap Nature : In a semiconductor with an indirect fundamental energy bandgap, such as silicon, the maximum of the valence band and the minimum of the conduction band are at dierent locations in the k-space as shown in Fig. 2.1(b). Recombination via a single photon, which carries negligible momentum, is not allowed because of momentum conservation. Participation of a phonon with the right momentum is necessary to satisfy momentum conservation. Phonons are quantized modes of lattice vibrations that occur in a solid. In the bulk material, this phonon-assisted optical transition is very weak, allowing many other nonradiative processes to dominate resulting in a huge drop in the light emission eciency. Figure 2.1: Schematic diagram of semiconductor band structure (dispersion relation) of dierent semiconductor types. (a) Direct bandgap semiconductor with electron-hole pair (exciton) formation after excitation from valance band to conduction band shows clear emission of a photon. (b) Indirect bandgap semiconductor require a phonon to make this transition possible. Figure modied according to reference [15]. 9
Page 1: Molecular Beam Epitaxial Growth of
Page 4 and 5: Gutachter (Supervisors): 1. Prof. D
Page 6 and 7: patterns indicating a 2D smooth sur
Page 8 and 9: (MEE = migration enhance epitaxy) u
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Page 12 and 13: CONTENTS 3.4.4 Planar Defects Assoc
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Page 16 and 17: Introduction thesis a detailed stud
Page 18 and 19: Introduction 1.1.2 Thesis Approach
Page 20 and 21: Introduction 1.2 Thesis Outline The
Page 24 and 25: Theoretical Background of Semicondu
Page 36 and 37: Heteroepitaxial Growth of III-V Sem
Page 64 and 65: Experimental Growth and Characteriz
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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MBE Growth of InAs and InGaAs Quant
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Optimization of MEE and MBE growth
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Conclusions substrates, respectivel
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REFERENCES [8] J. M. Gerard, O. Cab
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REFERENCES [29] http://www.wmi.badw
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REFERENCES [49] M. R. Brenner: GaP/
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REFERENCES [66] Y. Ishida, T. Takah
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REFERENCES [84] A. Garcia, C. M. Ma
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REFERENCES [100] M. Felici, P. Gall
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REFERENCES [116] H. Usui, H. Yasuda
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REFERENCES [133] Grassman, T. J. Br
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Conferences Contributions: Tariq Al
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Nomenclature
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REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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