Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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MBE Growth of Self-Assembled InAs and InGaAs Quantum Dots Embedded in Silicon Matrix carried out at constant voltage of 1 V , while the current was measured at different stripe distances. The I-V curve was recorded and the doping level was calculated for dierent As 4 uxes. Fig. 5.32 shows the doping level dependence with the BEP As 4 ux. A linear carrier concentration dependence on As 4 ux was observed up to a doping level of 7.28 × 10 17 cm −3 for a As 4 of BEP value 3.6 × 10 −8 Torr. A new series of samples were studied by keeping the As ux constant at 1.2 × 10 −8 Torr but with increasing the layer thickness from 100 nm to 200 nm. Figure 5.31: Schematic digram of the metallic stripes with dierent widths deposited on the top of the doped Si layer, for the electrical resistivity measurements. Resistivity measurement showed that the doping density increased by a factor of three with increased layer thicknesses from 100 nm to 200 nm, this can be explained by the band bending eect, which will get less with thicker layers. Hence, the transfered electrons that occupy the region where the conduction energy E c is below the Fermi level, and constitute an accumulation layer whose thickness is much less than the width of the band-bending in metal n-type semiconductor junction [15]. 100
5.6 Realization of P-N Junction Structure Figure 5.32: Doping level dependence on the As 4 equivalent beam ux. Figure 5.33: I-V curve of the P-N junction grown by MBE. However, the rst 100 nm were grown with low doping level of 2 × 10 17 cm −3 , 101
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Page 64 and 65: Experimental Growth and Characteriz
Page 78 and 79: MBE Growth of Self-Assembled InAs a
Page 118 and 119: MBE Growth of InAs and InGaAs Quant
Page 130 and 131: Optimization of MEE and MBE growth
Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
Page 146 and 147: REFERENCES [29] http://www.wmi.badw
Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
Page 154 and 155: REFERENCES [100] M. Felici, P. Gall
Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
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REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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