Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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CONTENTS 3.4.4 Planar Defects Associated to Polar on Non-Polar Epitaxy . 41 3.4.4.1 Anti-Phase Domains . . . . . . . . . . . . . . . . 42 3.4.4.2 Stacking Faults . . . . . . . . . . . . . . . . . . 46 3.4.4.3 Micro Twins . . . . . . . . . . . . . . . . . . . . . 47 4 Experimental Growth and Characterization Techniques 49 4.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 4.2 Molecular Beam Epitaxy Technique . . . . . . . . . . . . . . . . . 50 4.2.1 Reection High Energy Electron Diraction . . . . . . . . 52 4.2.2 Electron Beam Evaporator system for Silicon Homoepitaxy 54 4.3 Atomic Force Microscopy . . . . . . . . . . . . . . . . . . . . . . . 56 4.4 High Resolution Transmission Electron Microscopy . . . . . . . . 59 5 MBE Growth of Self-Assembled InAs and InGaAs Quantum Dots Embedded in Silicon Matrix 63 5.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 5.2 Experimental Details . . . . . . . . . . . . . . . . . . . . . . . . . 64 5.3 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . 64 5.3.1 Surface Preparation . . . . . . . . . . . . . . . . . . . . . . 65 5.3.2 Growth of InAs QDs Directly on Silicon Substrate . . . . . 67 5.3.2.1 Dependence on Substrate Orientation . . . . . . . 67 5.3.2.2 Ga Treatment . . . . . . . . . . . . . . . . . . . . 67 5.3.3 InAs Quantum Dots Grown on Silicon Buer Layer . . . . 69 5.3.3.1 Homoepitaxy of Silicon Buer Layer . . . . . . . 69 5.3.3.2 InAs Coverage . . . . . . . . . . . . . . . . . . . 71 5.3.3.3 Growth Temperature . . . . . . . . . . . . . . . . 71 5.3.3.4 V/III Ratio . . . . . . . . . . . . . . . . . . . . . 72 5.3.3.5 Indium Growth Rate . . . . . . . . . . . . . . . . 73 5.4 Self-Assembled InAs QDs Embedded in Si Matrix . . . . . . . . . 75 5.4.1 Experimental Details . . . . . . . . . . . . . . . . . . . . . 76 5.4.2 TEM Characterization of Si/InAs/Si Structure . . . . . . . 77 5.4.3 The Inuence of Post-Growth Annealing and Si Capping . 80 5.4.4 Growth Model of InAs QDs embedded in Si Matrix . . . . 87 5.4.5 Geometric Phase Analysis Strain vs. Material Strain . . . 91 x
CONTENTS 5.5 Self-Assembled InGaAs QDs Embedded in Si Matrix . . . . . . . 95 5.6 Realization of P-N Junction Structure . . . . . . . . . . . . . . . 99 6 MBE Growth of InAs and InGaAs Quantum Dots Embedded in GaAs Matrix 103 6.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 6.2 MBE Growth of SA-InAs Quantum Dots Embedded in Thin GaAs Matrix on Flat Silicon Substrate . . . . . . . . . . . . . . . . . . . 104 6.2.1 GaAs on Silicon Epitaxy . . . . . . . . . . . . . . . . . . . 104 6.2.2 MBE Epitaxy of InAs/GaAs/Si Structure . . . . . . . . . 105 6.3 Further Results: Site-Controlled Growth of InGaAs QDs Embedded in GaAs Matrix on Pre-Patterned Silicon Substrate . . . . . . 107 6.3.1 Experimental Details . . . . . . . . . . . . . . . . . . . . . 108 6.3.2 Characterization of Pre-Patterned Si Substrates . . . . . . 108 6.3.3 MBE Growth of GaAs/In 0.15 Ga 0.85 As/GaAs Quantum Dots on Pre-Patterned Silicon . . . . . . . . . . . . . . . . . . . 109 7 Optimization of MEE and MBE growth of GaP Buer on Silicon Substrate 115 7.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 7.2 GaP/Si Growth Approach . . . . . . . . . . . . . . . . . . . . . . 117 7.3 Experimental Details . . . . . . . . . . . . . . . . . . . . . . . . . 117 7.4 MEE Growth of GaP Buer on Si Substrate . . . . . . . . . . . . 118 7.4.1 MEE-GaP Growth Temperature . . . . . . . . . . . . . . . 120 7.4.2 MEE - P 2 /Ga Ratio . . . . . . . . . . . . . . . . . . . . . 121 7.5 Optimization of MEE Followed by MBE Growth of GaP Buer on Si Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 7.5.1 Growth Temperature of MBE-GaP . . . . . . . . . . . . . 122 7.5.2 P 2 /Ga Ratio of MBE-GaP . . . . . . . . . . . . . . . . . . 124 8 Conclusions 127 References 129 Publications and Conferences list 148 xi
Page 1: Molecular Beam Epitaxial Growth of
Page 4 and 5: Gutachter (Supervisors): 1. Prof. D
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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Optimization of MEE and MBE growth
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Conclusions substrates, respectivel
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REFERENCES [8] J. M. Gerard, O. Cab
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REFERENCES [29] http://www.wmi.badw
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REFERENCES [49] M. R. Brenner: GaP/
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REFERENCES [66] Y. Ishida, T. Takah
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REFERENCES [84] A. Garcia, C. M. Ma
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REFERENCES [100] M. Felici, P. Gall
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REFERENCES [116] H. Usui, H. Yasuda
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REFERENCES [133] Grassman, T. J. Br
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Conferences Contributions: Tariq Al
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Nomenclature
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REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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