Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Conferences Contributions:<br />
Tariq Al-Zoubi, Muhammad Usman, Mohamed Benyoucef, and Johann<br />
Peter Reithmaier, "Growth Of <strong>III</strong>/V quantum dots and dashes<br />
on silicon substrate: Formation and Characterization", 16th International<br />
on <strong>Molecular</strong> Beam Epitaxy (MBE 2010), Berlin - Germany,<br />
22nd - August 27th.<br />
Muhammad Usman, Tariq Al-Zoubi, Mohamed Benyoucef, and Johann<br />
Peter Reithmaier, "Nanostructuring <strong>of</strong> silicon for the MBE <strong>growth</strong><br />
<strong>of</strong> site-controlled InGaAs quantum dots", 37th International Conference<br />
on Micro and Nano Engineering (MNE 2011) Berlin - Germany,<br />
19th - 23rd September 2011.<br />
M. Benyoucef, M. Usman, T. Al Zoubi, A. Gushterov, T. Pfau, J.P.<br />
Reithmaier, "Pre-patterned silicon and GaAs substrates for the <strong>growth</strong><br />
<strong>of</strong> <strong>III</strong>-V nanostructures: morphological and optical properties", Deutsche<br />
Physikalische Gesellschaft (DPG 2012) (invited, Presentation). Berlin<br />
- Germany, 25th - 30th August.<br />
Tariq Al-Zoubi, Emil-Mihai Pavelescu, Johann Peter Reithmaier,"Growth<br />
<strong>of</strong> InAs quantum dots on silicon substrates: Formation and characterization",<br />
Deutsche Physikalische Gesellschaft (DPG, 2009) - Dresden<br />
- Germany (Presentation).<br />
Tariq Al-Zoubi, Muhammad Usman, Mohamed Benyoucef, and Johann<br />
Peter Reithmaier, "MBE <strong>growth</strong> <strong>of</strong> self-assembled InAs quantum<br />
dots and dashes on silicon substrate", Deutsche Physikalische
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