Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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MBE Growth of Self-Assembled InAs and InGaAs Quantum Dots Embedded in Silicon Matrix while the second 100 nm was grown at highest doping of 7.28 × 10 17 cm −3 . The p-type substrate represents the p-doped side, while the grown Si with As 4 doping is the n-type side of the P-N junction. Fig. 5.33 shows the I-V curve of the P-N junction with operation voltage (on voltage) about 3 V . In summary, the growth of n-type doped silicon layers with a controlled doping prole controlled by the As 4 ux has been achieved up to doping levels of 7 × 10 17 cm −3 . 102
Chapter 6 MBE Growth of InAs and InGaAs Quantum Dots Embedded in GaAs Matrix 6.1 Overview The hetroepitaxial growth of GaAs on Si has been investigated to provide heterogeneous substrates including both Si and III-V semiconductor layers [91, 92, 93]. In this chapter, new approaches or methods to integrate GaAs with silicon substrate will be investigated. The rst approach is basically based on self-assembled eects of MBE growth of InAs QDs on the top of GaAs islands using islands mechanism growth on at silicon substrate. The advantage to use GaAs as barrier prior to InAs quantum dots growth is the reduced lattice mismatch of ∼ 7% compared to Si matrix of about ∼ 11%. Moreover, this approach provide also the possibility to increase the distance between the Si/InAs interface by a GaAs spacer layer, and gradually reducing the strain energy prior to the active layer growth. A further approach is based mainly on the growth of GaAs/InGaAs/GaAs structure on pre-patterned Si substrates. However, the hetroepitaxial growth of III-V QDs directly on at silicon substrates has proven to be very challenging due to the defects formation caused by dislocations and anti-phase domains, which originate from the large lattice and thermal expansion mismatch and polar/non-polar nature of III/V and Si systems [1, 2, 94]. These structural defects are closely 103
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
Page 66 and 67: Experimental Growth and Characteriz
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Page 118 and 119: MBE Growth of InAs and InGaAs Quant
Page 130 and 131: Optimization of MEE and MBE growth
Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
Page 146 and 147: REFERENCES [29] http://www.wmi.badw
Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
Page 154 and 155: REFERENCES [100] M. Felici, P. Gall
Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
Page 164 and 165: REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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