Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Theoretical Background <strong>of</strong> Semiconductor Nanostructures<br />
the order <strong>of</strong> 0.01 eV . In contrast, Frenkel excitons are found in materials with<br />
a small dielectric constant, the Coulomb interaction between an electron and a<br />
hole may be strong and the excitons thus tend to be small, <strong>of</strong> the same order as<br />
the size <strong>of</strong> the unit cell. <strong>Molecular</strong> excitons may even be entirely located on the<br />
same molecule. These Frenkel excitons has a typical binding energy on the order<br />
<strong>of</strong> 0.1 to 1 eV and found mostly in insulator and molecular crystals [23]. They<br />
are also other exciton types like surface excitons, where the hole is inside the solid<br />
and the electron is in the vacuum. These electron-hole pairs (surface-excitons)<br />
can only move along the surface. Alternatively, an exciton may be thought <strong>of</strong><br />
as an excited state <strong>of</strong> an atom, ion, or molecule, the excitation wandering from<br />
one cell <strong>of</strong> the lattice to another this later type called atomic or molecular excitons.<br />
An electron is said to be found in the lowest unoccupied orbital and an<br />
electron hole in the highest occupied molecular orbital, and since they are found<br />
within the same molecular orbital manifold, the electron-hole state is said to be<br />
bound. <strong>Molecular</strong> excitons typically have characteristic lifetimes on the order <strong>of</strong><br />
nanoseconds, after which the ground electronic state is restored and the molecule<br />
undergoes photon or phonon emission [25].<br />
The eect <strong>of</strong> quantum connement on excitons in <strong>semiconductor</strong>s <strong>of</strong> lowdimensions<br />
have been intensively investigated for many years [26, 27, 28]. Two<br />
factors are responsible for the exciton properties in a quantum dot. The rst<br />
is the Coulomb interaction between the electron and hole.<br />
The second is the<br />
connement by the quantum dot three-dimensional potential. The connement<br />
is ruled by the size and shape <strong>of</strong> the dot as well as by the dot and barrier material<br />
to produce various bands osets. In the quantum dots, the connement also<br />
inuences binding energy. Therefore, both factors inuence the energy and oscillator<br />
strength <strong>of</strong> exciton in a complex way [23]. As the size <strong>of</strong> the quantum dots<br />
approaches the Bohr radius <strong>of</strong> bulk exciton, quantum connement eects become<br />
apparent. There are two limiting cases depending upon the ratio between the<br />
radius <strong>of</strong> the quantum dot (r) and the eective Bohr radius <strong>of</strong> the bulk exciton<br />
(B eff ) described in Eq. 2.7:<br />
B eff =<br />
2 ɛ<br />
m ∗ e 2 (2.7)<br />
18