Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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Introduction 1.1.2 Thesis Approach The successful integration of the III-V materials on silicon holds a great promise for the future demonstration of the practical integrated III-V optoelectronic devices on a Si CMOS platform. In particular, optical interconnect systems provide a promising approach for the realization of the next generation high-speed communication and computing technologies [11]. However, compatibility with microelectronic fabrication technologies is very limited. Our approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region or by embedding the active layer (III-V quantum dots or dashes nanostructures) in III-V matrix using the minimum amount of III-V materials as a barrier, i.e., below the critical thickness as it is illustrated in Fig. 1.1. This is most likely possible by utilizing the large strain accommodation properties of nanostructured III-V materials. However, the luminescence eciency of an indirect bandgap matrix can be dramatically improved by inserting a narrow and a direct bandgap material like InAs or InGaAs in silicon matrix. So far, only few details on the growth mechanism of InAs and InGaAs nanostructures on at silicon substrates have been provided in literature [3, 4]. On the other Figure 1.1: Schematic diagram of the thesis approach under the BMBF project (MON- ALISA), where the III-V semiconductor are just limited to the active layer and embedded in Si matrix or embedded in thin III-V matrix as a barrier. hand, it has been proposed that these structural defects may be circumvented 4
1.1 Monolithic Integration of III-V Semiconductor on Silicon by the realization of epitaxial growth of site-control III-V QDs on pre-patterned (multi-facetted nanoholes) substrates due to size eect, geometry and strain adjustments of the patterned features [12]. The growth of self-assembled as well as site-controlled III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates by molecular beam epitaxy (MBE) technique, the investigation of the inuence of the major growth parameters on their basic properties (density, geometry, composition, etc.) and the systematic characterization of their structural and optical properties are the core of the research work. This research work is nancially supported by the Federal Ministry of Education and Research (BMBF) project MONALISA. All the samples produced in this research work were grown by the ultra-high vacuum solid-state molecular beam epitaxy (UHV-SMBE) technique. This research work required also a variety of characterization techniques, serving as a reference to better interpret and understand of the experimental results. Molecular beam epitaxy (MBE) and ultra-high vacuum (UHV) technology were key components for achieving successful epitaxial growth. Reection high energy electron diraction (RHEED) was used to check the silicon surface preparation and the formation of the quantum dots (QDs). The structural analysis of the grown samples were characterized using atomic force microscopy (AFM), high resolution transmission electron microscopy (HR-TEM), high resolution X-ray diraction (HR-XRD) and secondary electron microscopy (SEM). I would like to point out that the TEM characterizations and strain analysis have been conducted by Dr. Achim Trampert and the PhD student Wu Mingjian at Paul Drude Institute (PDI) - Berlin (project partner). The silicon substrates pre-patterning work (nanoholes samples) using e-beam, dry and wet etching tools have been conducted by Muhammad Usman and Kerstin Fuchs. The electrical characterizations of the doped silicon samples have been conducted by Florian Schnabel. The training to use the phosphor cell for the growth of GaP on silicon have been conducted by Vitalii Ivanov and the author. I would like to thank them all for their eorts. 5
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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MBE Growth of InAs and InGaAs Quant
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Optimization of MEE and MBE growth
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Conclusions substrates, respectivel
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REFERENCES [8] J. M. Gerard, O. Cab
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REFERENCES [29] http://www.wmi.badw
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REFERENCES [49] M. R. Brenner: GaP/
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REFERENCES [66] Y. Ishida, T. Takah
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REFERENCES [84] A. Garcia, C. M. Ma
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REFERENCES [100] M. Felici, P. Gall
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REFERENCES [116] H. Usui, H. Yasuda
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REFERENCES [133] Grassman, T. J. Br
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Conferences Contributions: Tariq Al
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Nomenclature
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REFERENCES symbol Descriptions γ f
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like to thank all member of the Ins
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REFERENCES Erklärung Hiermit versi
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