Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

Heteroepitaxial Growth of III-V Semiconductor on Silicon Substrates
Figure 3.11:
HR-TEM image of stacking faults defects loops found in Si/InAs/Si
system. TEM performed@PDI-Berlin.
planes, which lies along a [110] direction parallel to the interface [66]. Annihilation
reactions can also occur between APDs on [011] planes [31], which can meet
along a [010] direction, as shown in Fig. 3.10. The high single density aorded by
substrate misorientation decreases the spacing between neighboring APDs, hence
increasing the probability that neighboring APDs will nd one another and form
small close domains. Many reports of single domain GaAs/Si and GaAs/Ge
in the literature actually refer to initial two domain III-V growth, followed by
rapid annihilation of APDs near the interface, leaving a single dominant domain
[67, 68, 69]. In the limit of vicinal (001) substrates, however, the spacing between
adjacent APDs is thought to be quite large such that self annihilation near the
interface of single-domain becomes less likely [50].
3.4.4.2 Stacking Faults
Stacking faults (SFs) are produced when the regular arrangements of layer atoms
are disturbed. A perfect crystal can be considered a stack of atomic layers occurring
in a particular sequence. The stacking of the zinc blende structure of III-V
semiconductor in the [111] direction can be described as ABCABC. A stacking
fault can occur with an extra plane of atoms inserted into the stacking sequence,
as in ABCBABC, a B layer is inserted. This is called an extrinsic stacking fault.
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