Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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REFERENCES [133] Grassman, T. J. Brenner, M. R. Grandal, J. Ratcli, C. Limei Yang, M. Mills Sharma, P. Fitzgerald, E.A., and S.A. Ringel : Lattice-matched GaP/SiGe virtual substrates for low-dislocation density GaInP/GaAsP/Si solar cells, IEEE Transactions ON Electron Devices 57, P. 3361-3369 (2012) [134] Y. Kohama, K. Uchida,T. Soga, T. Jimbo, and M. Umeno: Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH 3 preow, Applied Physics Letters 53, P. 862-864 (1988) [135] N. J. Curson, S. R. Schoeld, M. Y. Simmons, L. Oberbeck, J. L. OBrien, R. G. Clark: STM characterization of the Si-P heterodimer, Physical Review B 69, 195303 (2004) [136] T. J. Grassman, M. R. Brenner, S. Rajagopalan, R. Unocic, R. Deho, M. Mills, H. Fraser, and S. A. Ringel: Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy, Applied Physics Letters 94, 232106 (2009) 144
Publications and Conferences list Publications of the Author: T. Al-Zoubi, M. Usman, M. Benyoucef, J.P. Reithmaier, "Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization", J. Cryst. Growth May (2011), Volume 323 issue 1, pages 422- 425. M. Usman, T. Al-Zoubi, M. Benyoucef, J.P. Reithmaier, "Nanostructuring of silicon substrates for the site-controlled growth of GaAs/- In 0.15 Ga 0.85 As/GaAs nanostructures", Microelectronics engineering (MEE) Journal, Volume 97, September 2012, pages 59-63. M. Benyoucef, M. Usman, T. Al-Zoubi, and J. P. Reithmaier, "Prepatterned silicon substrates for the growth of III-V nanostructures", Phys. Status Solidi A 209, No. 12, pages 2402-2410. M. Wu, A. Trampert, T. Al-Zoubi, M. Benyoucef, and J. P. Reithmaier, "Strain of InAs quantum dots embedded in Si(001)", Journal of Applied Physics, (submitted). M. Benyoucef , T. Al-Zoubi, J. P. Reithmaier, M. Wu, A. Trampert, "Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon ", (To be published).
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 108 and 109: MBE Growth of Self-Assembled InAs a
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Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
Page 146 and 147: REFERENCES [29] http://www.wmi.badw
Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
Page 150 and 151: REFERENCES [66] Y. Ishida, T. Takah
Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
Page 154 and 155: REFERENCES [100] M. Felici, P. Gall
Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
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Page 166 and 167: like to thank all member of the Ins
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