Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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like to thank all member of the Institute of Nanostructure Technologies and Analytics (INA) for their sincere hospitality during my stay in Germany. I knowledge the cooperation with our project partner Paul Drude Institute (PDI) -Berlin, especially Dr. Achim Trampert and the PhD student Wu Mingjian for the TEM characterizations and the very useful discussions. Sohaib Afzal, Muhammad Usman, Vitalii Ivanov, Verena Zurbig and Vitalii Sichkovskyi are acknowledged for providing research related help and giving good company not only in the institute but also in meetings and conferences. I would like to acknownledge the team work in Monalisa project and inside the laboratories with Muhammad Usman for the scientic discussions and the nice time we spent in the laboratories. Thanks for all the pre-patterning work of silicon substrates and the e-beam training for Kerstin Fuchs. I would like to acknowledge also the team work inside molecular beam epitaxy (MBE) laboratory with Dr. Alexander Gushterov, Dr. Emil- Mihai Pavelesco, Vitalii Ivanov for giving me the best training for MBE system and for the useful scientic discussions. I would like to thank Dr. Cyril Popov for his help in the chemical laboratory for the wet etching processes and the full introduction of all the chemicals inside INA as well as his continuous support and encourage in managerial and general life issues. I would like also to thank Dr. Alexander Gushterov and Tino Pfau for giving me the excellent training to use atomic force microscopy (AFM) system. I acknowledge the nancial support and assistance of Federal Ministry of Education and research Germany (BMBF) under the project MONALISA for this research work.
The technical support from the technical sta in Institute of Nanostructure Technologies and Analytics (INA), especially from Dirk Albert in MBE lab and his continuous support and maintenance, Albert Malkomes for his electrical experience in the installation of silicon evaporation system, Florian Schnabel for the electrical characterization and Kirstin Fuchs for the help of nano-patterned samples and the substrate pre-cleaning steps before MBE loading are gratefully acknowledged. Especial thank to my wife, and my parents for the contentious encouraging and support during my PhD time.
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 116 and 117: MBE Growth of Self-Assembled InAs a
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Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
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Page 148 and 149: REFERENCES [49] M. R. Brenner: GaP/
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Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
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Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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