Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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REFERENCES Erklärung Hiermit versichere ich, dass ich die vorliegende Dissertation selbstständig und ohne unerlaubte Hilfe angefertigt und andere als die in der Dissertation angegebenen Hilfsmittel nicht benutzt habe. Alle Stellen, die wörtlich oder sinngemäÿ aus veröentlichten oder unveröfentlichten Schriften entnommen sind, habe ich als solche kenntlich gemacht. Kein Teil dieser Arbeit ist in einem anderen Promotionsoder Habilitationsverfahren verwendet worden. M.Sc./ Tariq Al Zoubi Unterschrift/ Datum/ Declaration This thesis is the sole work <strong>of</strong> the author. Information arising from other sources and collaborations is indicated in the text or referenced in the usual manner. The research presented in this thesis has not been submitted for a higher degree to any other university or institution. M.Sc./ Tariq Al Zoubi Signature/ Date/ 154
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Molecular Beam Epitaxial Growth of
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Gutachter (Supervisors): 1. Prof. D
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patterns indicating a 2D smooth sur
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(MEE = migration enhance epitaxy) u
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viii
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CONTENTS 3.4.4 Planar Defects Assoc
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CONTENTS xii
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Introduction thesis a detailed stud
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Introduction 1.1.2 Thesis Approach
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Introduction 1.2 Thesis Outline The
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Theoretical Background of Semicondu
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Heteroepitaxial Growth of III-V Sem
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Experimental Growth and Characteriz
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MBE Growth of Self-Assembled InAs a
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Page 118 and 119: MBE Growth of InAs and InGaAs Quant
Page 130 and 131: Optimization of MEE and MBE growth
Page 142 and 143: Conclusions substrates, respectivel
Page 144 and 145: REFERENCES [8] J. M. Gerard, O. Cab
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Page 152 and 153: REFERENCES [84] A. Garcia, C. M. Ma
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Page 156 and 157: REFERENCES [116] H. Usui, H. Yasuda
Page 158 and 159: REFERENCES [133] Grassman, T. J. Br
Page 160 and 161: Conferences Contributions: Tariq Al
Page 162 and 163: Nomenclature
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Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA

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