Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Publications and Conferences list<br />
Publications <strong>of</strong> the Author:<br />
T. Al-Zoubi, M. Usman, M. Benyoucef, J.P. Reithmaier, "Growth <strong>of</strong><br />
InAs quantum dots and dashes on silicon substrates: Formation and<br />
characterization", J. Cryst. Growth May (2011), Volume 323 issue 1,<br />
pages 422- 425.<br />
M. Usman, T. Al-Zoubi, M. Benyoucef, J.P. Reithmaier, "Nanostructuring<br />
<strong>of</strong> silicon substrates for the site-controlled <strong>growth</strong> <strong>of</strong> GaAs/-<br />
In 0.15 Ga 0.85 As/GaAs nanostructures", Microelectronics engineering (MEE)<br />
Journal, Volume 97, September 2012, pages 59-63.<br />
M. Benyoucef, M. Usman, T. Al-Zoubi, and J. P. Reithmaier, "Prepatterned<br />
silicon substrates for the <strong>growth</strong> <strong>of</strong> <strong>III</strong>-V nanostructures",<br />
Phys. Status Solidi A 209, No. 12, pages 2402-2410.<br />
M. Wu, A. Trampert, T. Al-Zoubi, M. Benyoucef, and J. P. Reithmaier,<br />
"Strain <strong>of</strong> InAs quantum dots embedded in Si(001)", Journal<br />
<strong>of</strong> Applied Physics, (submitted).<br />
M. Benyoucef , T. Al-Zoubi, J. P. Reithmaier, M. Wu, A. Trampert,<br />
"Nanostructured hybrid material based on highly mismatched <strong>III</strong>-V<br />
nanocrystals fully embedded in silicon ", (To be published).
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