Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Theoretical Background <strong>of</strong> Semiconductor Nanostructures<br />
discrete and the DOS consists <strong>of</strong> a series <strong>of</strong> sharp (delta-function-like) peaks.<br />
Eq. 2.6 describes the corresponding discrete eigenenergies <strong>of</strong> the electrons. Due<br />
to the nite life time <strong>of</strong> electronic states, the peaks are broadened and the DOS is<br />
a sum <strong>of</strong> Lorentzian functions. In real samples not all QDs are <strong>of</strong> the same size.<br />
Dierent sizes mean dierent eigenenergies. Accordingly, the electronic energy<br />
states <strong>of</strong> an ensemble <strong>of</strong> quantum dots are distributed around a mean energy<br />
related to the average QD size. In many applications, the active device material<br />
contains a large ensemble QDs. Their density <strong>of</strong> states then includes a statistical<br />
broadening characterized by a Gaussian function, this broadening is <strong>of</strong>ten called<br />
inhomogeneous broadening [21]. Being zero-dimensional, quantum dots have a<br />
sharper density <strong>of</strong> states than higher-dimensional structures. As a result, they<br />
have superior optical properties, as they are already in use by <strong>III</strong>-V based QDs<br />
laser diodes, ampliers, and biological sensors markets.<br />
2.3.2 Carriers Connement in Semiconductor Nanostructures<br />
Quantum connement in low-dimensional heterostructures strongly modies the<br />
basic properties <strong>of</strong> a <strong>semiconductor</strong> crystal and the bandgap energy. In a quantum<br />
well (QW), carriers are spatially conned in the transverse direction and move<br />
freely in its plane. In a quantum wire (QWR), carriers are spatially conned<br />
in two transverse directions and move freely along the wire direction. Hence,<br />
the carrier energy spectra in both QWs and QWRs are continuous within wide<br />
sub-bands <strong>of</strong> allowed states.<br />
Fundamentally, in all cases, quantum connement pushes away the allowed<br />
energies eectively increasing the bandgap. The enlargement <strong>of</strong> the quantum<br />
conned bandgap increases as the nanoparticle size becomes smaller. It also increases<br />
as the characteristic dimensionality <strong>of</strong> the quantum connement increases<br />
(from 1D to 2D to 3D). Therefore, quantum connement may be used to tune the<br />
energy <strong>of</strong> the emitted light in nanoscale optical devices based on the nanoparticle<br />
size and shape. In a quantum dot (QD), carriers are three-dimensionally con-<br />
ned and the modication <strong>of</strong> electronic properties is most strongly pronounced;<br />
16